Journal of Materials Science

, Volume 44, Issue 19, pp 5256–5262 | Cite as

Effect of uniaxial stress on the electromechanical properties in ferroelectric thin films under combined loadings

  • Hai-Xia CaoEmail author
  • Veng Cheong Lo
  • Zhen-Ya Li


The electromechanical properties of ferroelectric thin films under an alternating electric field and a static uniaxial compressive stress are investigated using the modified planar four-state Potts model. To implement the electromechanical properties and the coupling of the electrical and mechanical response, the mechanical energy density as well as the energy due to anisotropic switching between a-domain and c-domain are incorporated in the Hamiltonian. Besides, there are two contributions to the strain at each cell: eigenstrain and elastic strain. Our simulation results show that the longitudinal strain-electric field butterfly loop shifts downward along strain axis and that for the transverse strain shifts upward as the stress magnitude is increased. Moreover, the polarization-electric field hysteresis loop becomes a double-loop under a large compressive stress. The piezoelectric coefficient increases with the stress magnitude and reaches a maximum value at a critical stress level. It then gradually decreases to a small value at large stress magnitudes. Our results qualitatively agree with experimental ones.


Piezoelectric Coefficient Domain Switching Ferroelectric Thin Film Electromechanical Property Loop Area 



This work was supported by the Research Grant of the Hong Kong Polytechnic University under the Grant No. 1-ZV44, the National Natural Science Foundation of China under the Grant Nos. 10474069 and 50832002, the Natural Science Foundation of JiangSu Education Committee of China under the Grant No. 08KJB140006. One of authors, H.X. Cao, was supported by the Jiangsu Government Scholarship for Overseas Studies.


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.Department of Physics, Jiangsu Key Laboratory of Thin FilmsSoochow UniversitySuzhouChina
  2. 2.Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHong KongChina

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