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Journal of Materials Science

, Volume 44, Issue 19, pp 5345–5353 | Cite as

On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects

  • Gokul GopalakrishnanEmail author
  • Dmitry Ruzmetov
  • Shriram Ramanathan
Ferroelectrics

Abstract

Vanadium dioxide (VO2) has been shown to undergo an abrupt electronic phase transition near 70 °C from a semiconductor to a metal, with an increase in dc conductivity of over three orders of magnitude, making it an interesting candidate for advanced electronics as well as fundamental research in understanding correlated electron systems. Recent experiments suggest that this transition can be manifested independent of a structural phase transition in the system, and that it can be triggered by the application of an electric field across the VO2 thin film. Several experiments that have studied this behavior, however, also involve a heating of the VO2 channel by leakage currents, raising doubts about the underlying mechanism behind the transition. To address the important question of thermal effects due to the applied field, we report the results of electro-thermal simulations on a number of experimentally realized device geometries, showing the extent of heating caused by the leakage current in the “off” state of the VO2 device. The simulations suggest that in a majority of the cases considered, Joule heating is insufficient to trigger the transition by itself, resulting in a typical temperature rise of less than 10 K. However, the heating following a field-induced transition often also induces the structural transition. Nevertheless, for certain devices, we identify the possibility of maintaining the field-induced high conductivity phase without causing the structural phase transition: an important requirement for the prospect of making high-speed switching devices based on VO2 thin film structures. Such electronically driven transitions may also lead to novel device functionalities including ultra-fast sensors or gated switches incorporating ferroelectrics.

Keywords

Temperature Rise Joule Heating Structural Phase Transition Vanadium Dioxide Device Geometry 

Notes

Acknowledgements

This work was supported by AFRL-WPAFB and NSF-SIA Supplement to the Nanoscale Science and Engineering Initiative under NSF Award Number PHY-0601184. Device fabrication was performed, in part, at the Harvard University Center for Nanoscale Systems (CNS), a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by NSF Award No. ECS-0335765.

References

  1. 1.
    Morin FJ (1959) Phys Rev Lett 3:34CrossRefGoogle Scholar
  2. 2.
    Zylbersztejn A, Mott NF (1975) Phys Rev 11:4383CrossRefGoogle Scholar
  3. 3.
    Berglund CN, Guggenheim HJ (1969) Phys Rev 185:1022CrossRefGoogle Scholar
  4. 4.
    Mott NF (1990) Metal-insulator transition. Taylor and Frances, LondonCrossRefGoogle Scholar
  5. 5.
    Goodenough JB (1971) J Solid State Chem 3:490CrossRefGoogle Scholar
  6. 6.
    Imada M et al (1998) Rev Mod Phys 70:1039CrossRefGoogle Scholar
  7. 7.
    Cavalleri A et al (2001) Phys Rev Lett 87:237401CrossRefGoogle Scholar
  8. 8.
    Cavalleri A et al (2004) Phys Rev B 70:161102CrossRefGoogle Scholar
  9. 9.
  10. 10.
    Stefanovich G et al (2000) J Phys Condens Matter 12:8837Google Scholar
  11. 11.
    Boriskov PP et al (2002) Tech Phys Lett 28:406CrossRefGoogle Scholar
  12. 12.
    Kim HT et al (2004) New J Phys 6:52CrossRefGoogle Scholar
  13. 13.
    Watanabe Y (1995) Appl Phys Lett 66:1770CrossRefGoogle Scholar
  14. 14.
    Mathews S et al (1997) Science 276:238CrossRefGoogle Scholar
  15. 15.
    Kim HT et al (2006) Phys Rev Lett 97:266401CrossRefGoogle Scholar
  16. 16.
    Kim BJ et al (2008) Phys Rev B 77:235401CrossRefGoogle Scholar
  17. 17.
    Sakai J, Kurisu M (2008) Phys Rev B 78:033106CrossRefGoogle Scholar
  18. 18.
    Lee JS et al (2007) Appl Phys Lett 90:015907Google Scholar
  19. 19.
    Lee JS et al (2007) Appl Phys Lett 91:133509CrossRefGoogle Scholar
  20. 20.
    Samsonov GV (1987) The oxide handbook. IFI/Plenum, New YorkGoogle Scholar
  21. 21.
    Kim HT et al (2005) Appl Phys Lett 86:242101CrossRefGoogle Scholar
  22. 22.
    Okimura K, Sakai J (2007) Jpn J Appl Phys 46:813CrossRefGoogle Scholar
  23. 23.
    Berglund CN (1969) IEEE Trans Electron Devices 16:432CrossRefGoogle Scholar
  24. 24.
    Duchene J et al (1971) Appl Phys Lett 19:115CrossRefGoogle Scholar
  25. 25.
    Chae BG et al (2004) J Korean Phys Soc 44:884Google Scholar
  26. 26.
    Youn DH et al (2004) J Appl Phys 95:1407CrossRefGoogle Scholar
  27. 27.
    Kim BJ et al (2007) Appl Phys Lett 90:023515CrossRefGoogle Scholar
  28. 28.
    Ruzmetov D et al (2008) Phys Rev B 77:195442CrossRefGoogle Scholar
  29. 29.
    Ko C, Ramanathan S (2008) Appl Phys Lett 93:252101CrossRefGoogle Scholar
  30. 30.
    Lasance C, Moffat C (2005) Elec Cool 11:4Google Scholar
  31. 31.
    Mlyuka NR, Kivaisi RT et al (2006) J Mater Sci 41:5619. doi: https://doi.org/10.1007/s10853-006-0261-y CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Gokul Gopalakrishnan
    • 1
    Email author
  • Dmitry Ruzmetov
    • 1
  • Shriram Ramanathan
    • 1
  1. 1.School of Engineering and Applied SciencesHarvard UniversityCambridgeUSA

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