Journal of Materials Science

, Volume 44, Issue 12, pp 3229–3234 | Cite as

Electrical, thermal, and dielectric properties of PbZr1−xSnxO3 (0 ≤ x ≤ 0.3) single crystals

  • I. Jankowska-SumaraEmail author
  • A. Majchrowski
  • J. Żmija


PbZrO3 and mixed PbZr1−xSnxO3 single crystals were grown by means of high temperature solution growth technique. A spontaneous crystallization was carried out in a Pt crucible, with PbO as a solvent. Electrical as well as thermal and dielectric properties were investigated in terms of Sn concentration. The measurements have been made in the large temperature range between 120 K and 800 K. The temperature dependences of cp for investigated crystals can be approximated by the Einstein function and at high temperatures (cubic phase) cp reaches the classical Dulong–Petit limit value ~125 J/mol K. From electrical measurements the ac and dc conductivity and the activation energies have been calculated and attributed to different types of electrical conductivity.


Order Phase Transition Transient Phase Tricritical Point Spontaneous Crystallization Displacive Type 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



This work was partially supported by the State Committee of Scientific research (KBN).


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • I. Jankowska-Sumara
    • 1
    Email author
  • A. Majchrowski
    • 2
  • J. Żmija
    • 2
  1. 1.Institute of PhysicsPedagogical UniversityKrakówPoland
  2. 2.Institute of Applied PhysicsMilitary University of TechnologyWarsawPoland

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