Microstructures and properties of Bi3.25La0.75Ti2.94V0.06O12 ferroelectric thin film deposited by sol–gel method
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Bi3.25La0.75Ti2.94V0.06O12 (BLTV) thin film was fabricated on the Pt/TiO2/SiO2/p-Si(100) substrate using sol–gel method. The microstructures and electrical properties of the film after cosubstitution of La and V were investigated. The BLTV thin film shows less highly c-axis oriented than the BIT thin film mainly with fine rod-like grains. Raman spectroscopy shows that TiO6 (or VO6) symmetry decreases and Ti–O (or V–O) hybridization increases for V substitution. The Pr and Ec values of the BLTV thin film are 26.3 μC/cm2 and 98 kV/cm at a voltage of 12 V, respectively. The thin film also exhibits a very strong fatigue endurance up to 1010 cycles and low leakage current density. The excellent properties of the BLTV thin film are attributed to the effective decrease or suppression of oxygen vacancies after La and V cosubstitution in the thin film.
KeywordsOxygen Vacancy Leakage Current Density Ferroelectric Thin Film Bismuth Titanate Lanthanum Nitrate
This work is supported by the Key program of National Nature Science Foundation of China, Nos. 90407023 and 60571009. The authors gratefully acknowledge technical assistance from Analytical and Testing Center of Huazhong University of Science and Technology, China.
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