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Journal of Materials Science

, Volume 44, Issue 4, pp 939–944 | Cite as

Effects of Ga content on thermoelectric properties of P-type Ba8Ga16+xZn3Ge27−x type-I clathrates

  • Shu-kang DengEmail author
  • Xin-feng Tang
  • Pei-zhi Yang
  • Ming Li
Article

Abstract

P-type Ba8Ga16+xZn3Ge27−x (x = 0.1, 0.2, 0.3, and 0.4) type-I clathrates were synthesized by combining solid-state reaction with spark plasma sintering (SPS) technology. The effects of slight increase of Ga content on thermoelectric properties have been investigated. The results show that at room temperature the carrier concentration Np of p-type Ba8Ga16+xZn3Ge27−x clathrates increases remarkably compared with that of Ba8Ga16Zn3Ge27 compound, which results in the increases of electrical conductivity although carrier mobility μH slightly decreases. The thermal conductivity κ of all samples increases with the increase of Ga content. Ba8Ga16.2Zn3Ge26.8 compound exhibits the highest ZT value of 0.43 at 700 K, which is increased by 13% compared with that of Ba8Ga16Zn3Ge27 compound.

Keywords

Carrier Concentration Clathrate Spark Plasma Sinter Seebeck Coefficient Lattice Thermal Conductivity 

Notes

Acknowledgement

This work is sponsored by the National Basic Research Program of China (Grant Nos. 2007CB607501 and 2007CB607503) and Yunnan Natural Science Fund (Grand No. 2008CD114).

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Shu-kang Deng
    • 1
    Email author
  • Xin-feng Tang
    • 2
  • Pei-zhi Yang
    • 1
  • Ming Li
    • 1
  1. 1.Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing TechnologyYunnan Normal UniversityKunmingChina
  2. 2.State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of TechnologyWuhanChina

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