Journal of Materials Science

, Volume 44, Issue 2, pp 401–407 | Cite as

The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol–gel method

  • O. PakmaEmail author
  • N. Serin
  • T. Serin


In this study, we have studied the effect of repeated annealing temperatures on TiO2 thin films prepared by dip-coating sol–gel method onto the glasses and silicon substrates. The TiO2 thin films coated samples were repeatedly annealed in the air at temperatures 100, 200, and 300 °C for 5 min period. The dipping processes were repeated 5 to 10 times in order to increase the thickness of the films and then the TiO2 thin films were annealed at a fixed temperature of 500 °C for 1 h period. The effect of repeated annealing temperature on the TiO2 thin films prepared on glass substrate were investigated by means of UV–VIS spectroscopy, X-ray diffraction (XRD), and atomic force microscopy (AFM). It was observed that the thickness, average crystallite size, and average grain size of TiO2 samples decreased with increasing pre-heating temperature. On the other hand, thickness, average crystallite size, and average grain size of TiO2 films were increased with increasing number of the layer. Al/TiO2/p-Si metal–insulator–semiconductor (MIS) structures were obtained from the films prepared on p-type single silicon wafer substrate. Capacitance–voltage (CV) and conductance–voltage (G/ω–V) measurements of the prepared MIS structures were conducted at room temperature. Series resistance (Rs) and oxide capacitance (Cox) of each structures were determined by means of the CV curves.


TiO2 Atomic Force Microcopy TiO2 Film Average Crystallite Size TiO2 Thin Film 



This work is supported by Ankara University (BIYEP) Project number 2005-K-120-140-8 and Ankara University Scientific Research Project (BAP), 2007-07-45-054.


  1. 1.
    Kannan K, Balasubrahmaniyam R (1988) Thin Solid Films 109:59CrossRefGoogle Scholar
  2. 2.
    Yang L, Scott Saavedra S, Armstrong NR, Hayes J (1994) Anal Chem 66:1254CrossRefGoogle Scholar
  3. 3.
    Ito S, Kitamura S, Yanagia S (2003) Solar Energy Mater Solar Cells 76:3CrossRefGoogle Scholar
  4. 4.
    Czapla A, Kusior E, Bucko M (1989) Thin Solid Films 182:15CrossRefGoogle Scholar
  5. 5.
    Sanon G, Rup R, Mansingh A (1990) Thin Solid Films 190:287CrossRefGoogle Scholar
  6. 6.
    Zhang JY, Boyd IW, Sullivan BJ, Kelly PK, Seneteur JP (2002) J Non-Cryst Solids 303:134CrossRefGoogle Scholar
  7. 7.
    Chatelon JP, Terrier C, Bernstein E, Berjoan R, Roger JA (1994) Thin Solid Films 247:162CrossRefGoogle Scholar
  8. 8.
    Maddalena A, Dal Maschio R, Dire S, Raccanelli A (1990) J Non-Cryst Solids 121:365CrossRefGoogle Scholar
  9. 9.
    Choi Y, Yamamoto S, Umebayashi T, Yoshikawa M (2004) Solid State Ionics 172:105CrossRefGoogle Scholar
  10. 10.
    Tracey SM, Hodgson SNB, Ray AK, Ghassemlooy Z (1998) J Mater Process Technol 77:86CrossRefGoogle Scholar
  11. 11.
    Kern W (1993) Handbook of semiconductor cleaning technology Noyes, New YorkGoogle Scholar
  12. 12.
    Yu J, Zhao X, Zhao Q (2000) J Mater Sci Lett 19:1015CrossRefGoogle Scholar
  13. 13.
    Cullity BD (1978) Elements of X-ray diffraction, 2nd edn. Addison-Wesley, California, USAGoogle Scholar
  14. 14.
    Leprince-Wang Y, Yu-Zhang K (2001) Surf Coat Technol 140:155CrossRefGoogle Scholar
  15. 15.
    Yang W, Marino J, Monson A, Wolden CA (2006) Semicond Sci Technol 21:1573CrossRefGoogle Scholar
  16. 16.
    Svanepoel R (1983) J Phys E Sci Instrum 16:1214CrossRefGoogle Scholar
  17. 17.
    Tang H, Berger H, Schmid PE, Levy F, Burri G (1993) Solid State Commun 87:847CrossRefGoogle Scholar
  18. 18.
    Pascaul J, Camassel J, Mathieu H (1978) Phys Rev B 18:5606CrossRefGoogle Scholar
  19. 19.
    Wang S, Xia G, Shao J, Fan Z (2006) J Alloys Compd 424:304CrossRefGoogle Scholar
  20. 20.
    Park YR, Jim KJ (2005) Thin Solid Films 484:34CrossRefGoogle Scholar
  21. 21.
    Nicollian EH, Brews HR (1982) Metal-oxide semiconductor (MOS) physics and technology. Wiley, New YorkGoogle Scholar
  22. 22.
    Nicollian EH, Brews HR (1967) Bell Syst Technol J 46:1055CrossRefGoogle Scholar

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© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  1. 1.Department of Engineering Physics, Faculty of EngineeringAnkara UniversityAnkaraTurkey
  2. 2.Department of Physics, Faculty of Arts and ScienceMuğla UniversityMuğlaTurkey

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