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Journal of Materials Science

, Volume 43, Issue 16, pp 5551–5563 | Cite as

Charge-transport and photocurrent generation in bulk hetero junction based on Chloro-aluminum phthalocyanine (ClAlPc) and Rose Bengal (RB)

  • M. S. Roy
  • P. Balraju
  • Y. S. Deol
  • S. K. Sharma
  • G. D. SharmaEmail author
Article
First Online:

Abstract

Bulk-hetero junctions were made with the intermixing of Chloro-aluminum phthalocyanine (ClAlPc) (p-type) and Rose Bengal (RB) (n-type material) from the common solvent. The optical properties of blend reveal that light harvesting is possible from almost entire visible spectrum of the material. The devices were characterized by recording its J–V in dark and under illumination and impedance analysis under various temperatures over wide frequency range, i.e., from 100 Hz to 1 MHz. Various photovoltaic parameters like open circuit voltage (Voc), short-circuit photocurrent (Jsc), and fill factor were evaluated and found to be as 0.92 V and 0.44 mA/cm2 and 0.48, respectively. Also, the effect of thermal annealing on the optical, electrical, and photovoltaic properties of bulk heterojunction device was investigated. From the impedance spectroscopy, we conclude that the change in bulk resistance and dielectric constant of active layer due to the illumination has a direct relevance to the photocurrent generation by the device. The overall observation reveals that upon thermal annealing of the device imparts substantial increase in hole mobility which results in balanced charge transport.

Keywords

Space Charge Thermal Annealing Power Conversion Efficiency Hole Mobility Rose Bengal 
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Notes

Acknowledgement

We are grateful to Council for Scientific and Industrial Research for financial support through project.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • M. S. Roy
    • 1
  • P. Balraju
    • 2
  • Y. S. Deol
    • 1
  • S. K. Sharma
    • 2
  • G. D. Sharma
    • 2
    • 3
    Email author
  1. 1.Defence LaboratoryJodhpurIndia
  2. 2.Physics Department, Molecular Electronic and Optoelectronic Device LaboratoryJNV UniversityJodhpurIndia
  3. 3.Mandsaur Institute of TechnologyMandsaurIndia

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