Platinum thin films deposited on silicon oxide by focused ion beam: characterization and application
- 337 Downloads
Focused ion beam system was used for deposition of platinum (Pt) thin films on thermally oxidized silicon (Si). Various test patterns (squares and lines) were deposited for electrical characterization of the films, using 2- and 4-terminal measurements. Tests with parallel Pt lines were also carried out, and considerable leakage was detected for the interline distances in the sub-micron range. We investigated two ways to decrease the leakage current: inducing surfaces roughness and using an oxygen plasma after patterns deposition. A method of dielectrophoresis with an AC electric field was applied to align and deposit metallic multi-wall carbon nanotubes (CNT) between pre-fabricated metal, gold, and palladium electrodes with a micron-scale separation. Further, using focused electron and ion beam-deposited Pt contacts in two different configurations (“Pt-on-CNT” and “CNT-on-Pt”), 4-terminal measurements have been performed to evaluate intrinsic nanotube resistances.
- 2.Anazawa N, Aihara R, Okunuki M, Shimizu R (1982) Scanning Electron Microscopy IV, AMF O’Hare, Chicago, p 1443Google Scholar
- 6.Natasi M, Mayer JW, Hirvonen JK (1996) Ion-Solid Interactions: Fundamentals and Applications. Cambridge University Press, Cambridge, p 218Google Scholar
- 7.Go MSH, MS thesis, Focused ion beam fabrication of junctions in the charge density wave conductor NbSe, Delft Univ. of Technol., Delft, The Netherlands (2001)Google Scholar
- 10.Van der Pauw LJ (1958) Phillips Res Rep 13(1):1Google Scholar