The relative densities of SiCln (n = 0–2) in SiCl4 radio frequency (rf) glow discharge plasma are measured by mass spectrometry. The effects of discharge parameters, i.e., rf power, discharge pressure, substrate temperature, and SiCl4 flow rate on the relative densities of SiCln (n = 0–2) are investigated in detail. An optimum configuration of discharge parameters (low rf power, high discharge pressure, low substrate temperature, and low flow rate), which enhanced the formation of SiCln (n = 0–2) radicals, is searched by a great deal of measurements and discussions. In the optimum configuration of discharge parameters, we measure the spatial distribution of SiCln (n = 0–2) radicals in the most optimized plasma parameters. The experimental results reveal that Si and SiCl may be the dominant precursors in forming the thin film.
Relative Density Discharge Pressure Ionization Cross Section SiCl Discharge Chamber
This is a preview of subscription content, log in to check access.
This work is supported by the State Key Developments Program for Basic Research of China (Grant No. G2000028208). The authors would like to thank Professor K. N. Joshipura for calculating the ionization cross sections αn(Ee) of SiCln (n = 1,2) radicals.