An investigation on the thermodynamic stability of V6Si5
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The V–Si system has been assessed by Smith [1, 2], and results were collected in recently published binary phase diagram handbook . The thermodynamic optimizations for the system were also performed by Luoma , Rand and Saunders . However, the thermodynamic stability of V6Si5 is still in question. Using the method of solid state diffusion, Hallais et al.  noted that formation of V6Si5 could not be achieved below 1000 °C. By means of bulk V–Si diffusion couples, Milanese et al.  found that there is a nucleation barrier for the formation of V6Si5 at 1150 °C. Based on the electromotive force (emf) measurement, Eremenko et al.  realized that the difficulty of achieving an equilibrium state of V–Si alloys containing the phase V6Si5 is indeed overdrawn. Using activity data deduced from the Knudsen cell-mass spectrometry, Storms and Myers  indicated the eutectoid decomposition temperature (V6Si5⇔V5Si3 + VSi2) as 1160 ± 100 K. This temperature was mistakenly regarded to be...
KeywordsDecomposition Temperature Interstitial Element Calculated Enthalpy Thermodynamic Optimization Gibbs Energy Function
The financial supports from the National Outstanding Youth Science Foundation of China (Grant No. 50425103), Hunan Provincial Natural Science Foundation of China (Grant No. 06JJ20010) and the State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics (Grant No. SKL200606SIC) are acknowledged.
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