Journal of Materials Science

, Volume 41, Issue 3, pp 1007–1012

Deep electronic states in ion-implanted Si

  • J. H. Evans-Freeman
  • D. Emiroglu
  • M. A. Gad
  • N. Mitromara
  • K. D. Vernon-Parry
Article
  • 42 Downloads

Abstract

In this paper we present an overview of the deep states present after ion-implantation by various species into n-type silicon, measured by Deep Level Transient Spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS). Both point and small extended defects are found, prior to any anneal, which can therefore be the precursors to more detrimental defects such as end of range loops. We show that the ion mass is linked to the concentrations of defects that are observed, and the presence of small interstitial clusters directly after ion implantation is established by comparing their behaviour with that of electrically active stacking faults. Finally, future applications of the LDLTS technique to ion-implanted regions in Si-based devices are outlined.

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Copyright information

© Springer Science + Business Media, Inc. 2006

Authors and Affiliations

  • J. H. Evans-Freeman
    • 1
  • D. Emiroglu
    • 1
  • M. A. Gad
    • 1
  • N. Mitromara
    • 1
  • K. D. Vernon-Parry
    • 1
  1. 1.Materials and Engineering Research InstituteSheffield Hallam UniversitySheffieldUnited Kingdom

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