Journal of Materials Science

, Volume 41, Issue 3, pp 1007–1012

Deep electronic states in ion-implanted Si

  • J. H. Evans-Freeman
  • D. Emiroglu
  • M. A. Gad
  • N. Mitromara
  • K. D. Vernon-Parry


In this paper we present an overview of the deep states present after ion-implantation by various species into n-type silicon, measured by Deep Level Transient Spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS). Both point and small extended defects are found, prior to any anneal, which can therefore be the precursors to more detrimental defects such as end of range loops. We show that the ion mass is linked to the concentrations of defects that are observed, and the presence of small interstitial clusters directly after ion implantation is established by comparing their behaviour with that of electrically active stacking faults. Finally, future applications of the LDLTS technique to ion-implanted regions in Si-based devices are outlined.


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  1. 1.
    G. MANNINO, N. E. B. COWERN, F. ROOZEBOOM and J. G. M. VAN BERKUM, Appl. Phys. Lett. 76 (2000) 855.CrossRefGoogle Scholar
  2. 2.
    S. LIBERTINO, S. COFFAS and J. L. BENTON, Phys. Rev. B 63 (2001) 195206.CrossRefGoogle Scholar
  3. 3.
    B.G. SVENSSON, C. JAGADISH, A. HALLEN and J. LALITA, ibid. 55 (1997) 10498.CrossRefGoogle Scholar
  4. 4.
    P. PELLEGRINO, N. KESKITALO, A. HALLEN and B. G. SVENSSON, Nucl. Instr. Meth. B 148 (1999) 306.CrossRefGoogle Scholar
  5. 5.
    N. ABDELGADER and J. H. EVANS-FREEMAN, J. Appl. Phys. 93 (2003) 5118.CrossRefGoogle Scholar
  6. 6.
    H. A. W. EL MUBAREK, J. M. BONAR, G. D. DILLIWAY, P. ASHBURN, M. KARUNARATNE, A. F. WILLOUGHBY, Y. WANG, P. L. F. HEMMENT, R. PRICE, J. ZHANG and P. WARD, ibid. 96 (2004) 4114.CrossRefGoogle Scholar
  7. 7.
    G. D. WATKINS and J. W. CORBETT, Phys. Rev. 138 (1965) A543.CrossRefGoogle Scholar
  8. 8.
    M. T. ASOM, J. L. BENTON, R. SAUER and L. C. KIMERLING, Appl. Phys. Lett. 51 (1987) 256.CrossRefGoogle Scholar
  9. 9.
    J. LALITA, B. G. SVENSSON, C. JAGADISH and A. HALLEN, Nucl. Instr. and Meth. B 127/128 (1997) 69.CrossRefGoogle Scholar
  10. 10.
    J. H. EVANS-FREEMAN, P. Y. Y. KAN and N. ABDULGADER, J. Appl. Phys. 92 (2002) 3755.CrossRefGoogle Scholar
  11. 11.
    P. R. WILSHAW and G. R. BOOKER, in “Proceedings of the Microscopical Society Conference” (1985) 329.Google Scholar
  12. 12.
    Y. QIAN, J. H. EVANS and A. R. PEAKER, Inst. Phys. Conf. Ser. No. 134 (1993) 121.Google Scholar
  13. 13.
    L. DOBACZEWSKI, P. KACZOR, I. HAWKINS and A. R. PEAKER, J. Appl. Phys. 76 (1994) 194.CrossRefGoogle Scholar
  14. 14.
    J. F. ZIEGLER, J. P. BIERSACK and U. LITTMARK, in “The Stopping and Range of Ions in Solids” Pergamon, New York, 1985; Google Scholar
  15. 15.
    A. OURMAZD, P. R. WILSHAW and G. R. BOOKER, Physica B 116 (1983) 600.CrossRefGoogle Scholar
  16. 16.
    K. H. YANG, J. Electrochem. Soc. 131 (1984) 1140.CrossRefGoogle Scholar
  17. 17.
    D. V. LANG, J. Appl. Phys. 45 (1974) 3023.CrossRefGoogle Scholar
  18. 18.
    P. PELLEGRINO, P. LEVEQUE, J. WONG-LEUNG, C. JAGADISH and B. G. SVENSSON, Appl. Phys. Lett. 78 (2001) 3442.CrossRefGoogle Scholar
  19. 19.
    M. A. LOURENCO, M. S. A. SIDDIQUI, G. SHAO, R. M. GWILLIAM and K. P. HOMEWOOD, Phys. Stat. Sol. A 201 (2004) 239.CrossRefGoogle Scholar

Copyright information

© Springer Science + Business Media, Inc. 2006

Authors and Affiliations

  • J. H. Evans-Freeman
    • 1
  • D. Emiroglu
    • 1
  • M. A. Gad
    • 1
  • N. Mitromara
    • 1
  • K. D. Vernon-Parry
    • 1
  1. 1.Materials and Engineering Research InstituteSheffield Hallam UniversitySheffieldUnited Kingdom

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