Advertisement

Journal of Materials Science

, Volume 41, Issue 19, pp 6492–6496 | Cite as

The photoconductance of a single CdS nanoribbon

  • Liu Yingkai
  • Zhou Xiangping
  • Hou Dedong
  • Wu Hui
Letter

Introduction

Semiconductor nanowires and nanoribbons are being considered as the basis of a variety of device technologies. Recently, ZnO nanowire ultraviolet photodetectors and optical switches have been investigated [1]. The results suggest that they are good candidates for optoelectronic switches. Zhou et al. [2] reported the UV response of SnO2 nanowires and observed a strong modulation of the conductance in SnO2 nanowire by UV illumination. CdS is an important semiconductor with a direct band gap of 2.42 eV that falls in the visible region at room temperature. CdS thin films have excellent photoconductive properties and were used in a large number of solid-state device applications such as photoconductive (PC) detection, xerography, photo-voltaic solar energy conversion, and thin-film transistor electronics. But up to now, only a relatively small effort has been paid to study the photoconductance of CdS nanoribbons [3] and a single nanowire [4], no one reported the...

Keywords

Decay Time Light Illumination Illumination Intensity Perfect Single Crystal SnO2 Nanowires 

Notes

Acknowledgements

The work was supported by a grant from Natural Science Foundation of Educational Council of Yunnan Province (No. 5Z0098A) and the Research Grants Council of the Hong Kong SAR, China [No. CityU 3/01C (8730016)], a Strategic Research Grant of Hong Kong University [No. 7001175].

References

  1. 1.
    Kind H, Yan HQ, Messer B, Law M, Yang PD (2002) Adv Mater 14:185CrossRefGoogle Scholar
  2. 2.
    Liu ZQ, Zhang DH, Han S, Li C, Tang T, Jin W, Liu XL, Lei B, Zhou CW (2002) Adv Mater 15:1754CrossRefGoogle Scholar
  3. 3.
    Li QH, Gao T, Wang TH (2005) Appl Phys Lett 86:193109CrossRefGoogle Scholar
  4. 4.
    Gu Y Kwak ES, Lensch JL, Allen JE, Odom TW, Lauhon LJ (2005) Appl Phys Lett 87:043111CrossRefGoogle Scholar
  5. 5.
    Liu YK, Zapien JA, Shan YY, Geng CY, Lee CS, Lee ST (2005) Adv Mater 17:1372CrossRefGoogle Scholar
  6. 6.
    Rose A (1978) Concepts in photoconductivity and allied problems. KriegerGoogle Scholar
  7. 7.
    Publishing Company, New York Google Scholar
  8. 8.
    Fu SL, Wu TS, Houng MP (1985) Sol Energy Mater 12:309CrossRefGoogle Scholar
  9. 9.
    Porada Z, Shabowska E (1980) Thin Sol Films 66:455CrossRefGoogle Scholar
  10. 10.
    Tschulena G Battelle Institutes, Frankfurt, Private CommunicationsGoogle Scholar
  11. 11.
    Amalnerkar DP (1999) Mater Chem Phys 60:1CrossRefGoogle Scholar
  12. 12.
    Shear H, Hilton EA, Bube RH (1965) J Electrochem Soc 112:997CrossRefGoogle Scholar
  13. 13.
    Robinson AL, Bube RH (1965) J Electrochem Soc 112:1001CrossRefGoogle Scholar
  14. 14.
    Bube RH (1966) J Electochem Soc 113:793CrossRefGoogle Scholar
  15. 15.
    Nair PK, Nair MTS, Campos J, Sansores LE (1987) Sol Cells 22:211CrossRefGoogle Scholar
  16. 16.
    Wu CH, Bube RH (1974) J Appl Phys 45:648CrossRefGoogle Scholar
  17. 17.
    Sze SM (1981) Physics of semiconductor devices. Interscience, New York, p 849Google Scholar
  18. 18.
    Joson NV (1990) Photoconductivity: art, science, and technology. Marcel Dekker, Inc., New York and Basel p 49Google Scholar
  19. 19.
    Bube RH (1992)Photoelectronic properties of semiconductors. Cambridge University Press, CambridgeGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Liu Yingkai
    • 1
    • 2
    • 3
  • Zhou Xiangping
    • 1
  • Hou Dedong
    • 1
  • Wu Hui
    • 1
  1. 1.Department of PhysicsYunnan Normal UniversityKunmingP.R. China
  2. 2.Center of Super-Diamond and Advanced Films (COSDAF)City University of Hong KongHong Kong SARP.R. China
  3. 3.Department of Physics and Materials ScienceCity University of Hong KongHong Kong SARP.R. China

Personalised recommendations