Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence
- 217 Downloads
Thin films of Praseodymium doped AlN are deposited on silicon (111) substrates at 77 K and 950 K by rf magnetron sputtering method. About 500–1000 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of Al with Pr. X-rays diffraction results show that films deposited at 77 K are amorphous and those deposited at 950 K are crystalline. Cathodoluminescence studies are performed at room temperature and luminescence peaks are observed in a wide range from ultraviolet to infrared region. The most intense peak is obtained in green at 526 nm from amorphous films as a result from 3P1→3H5 transition. In crystalline films the intense peak was obtain in red at 648 nm as a result from 3P0→3F2 transition. Films are thermally activated at 1300 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence. Two peaks at 488 nm and 505 nm merged after thermal activation, giving rise to a single peak at 495 nm.
KeywordsThermal Activation Green Emission Praseodymium Blue Emission Amorphous Film
- 2.M Maqbool, Richardson HH, Kordesch ME (2005) Mater. Res. Soc. Symp. Proc. vol. 831 Article E8.12.1, Materials Research SocietyGoogle Scholar
- 3.Maqbool M, Richardson HH, Van Patten PG, Kordesch ME (2004) Mat. Res. Soc. Symp. Proc. 798:8.5.1–8.5.5, Materials Research SocietyGoogle Scholar
- 11.Levinshtein M, Rumyantsev S, Shur M (eds) (2001) Properties of advanced semiconductor materials, GaN, AlN, InN BN, SiC, SiGe. Wiley, New YorkGoogle Scholar