Journal of Materials Science

, Volume 41, Issue 17, pp 5531–5537 | Cite as

P-type semiconducting Cu2O–NiO thin films prepared by magnetron sputtering

  • Toshihiro Miyata
  • Hideki Tanaka
  • Hirotoshi Sato
  • Tadatsugu Minami
Article

Abstract

P-type semiconducting thin films consisting of a new multicomponent oxide composed of Cu2O and NiO were deposited on glass substrates by r.f. magnetron sputtering using Cu2O–NiO mixed powder targets. The multicomponent oxide thin films deposited in an Ar atmosphere with a Ni content (Ni/(Cu + Ni) atomic ratio) in the range from 0 to 100 at.% were found to be p-type semiconductors. As the Ni content was increased in the range from 0 to about 30 at.%, the energy bandgap of the resulting films gradually increased as well as the obtained resistivity increased from 70 to 4 × 104 Ω cm, a consequence of decreases in both the Hall mobility and the hole concentration. The films prepared with a Ni content of about 30–50 at.% exhibited a relatively constant resistivity and energy bandgap. The resistivity and the energy bandgap of films prepared with a Ni content above about 60 at.% considerably increased as the Ni content was increased. Furthermore, a pn thin-film heterojunction prepared by depositing undoped n-ZnO and p-multicomponent oxide (Ni content of 50 at.%) thin films exhibited a rectifying I–V characteristic.

References

  1. 1.
    Sato H, Minami T, Takata S, Yamada T (1993) Thin Solid Films 236:27CrossRefGoogle Scholar
  2. 2.
    Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H, Hosono H (1997) Nature 389:939CrossRefGoogle Scholar
  3. 3.
    Yamamoto T, Katayama-Yoshida H (1999) Jpn J Appl Phys 38:L166CrossRefGoogle Scholar
  4. 4.
    Minegishi K, Koiwai Y, Kikuchi Y, Yano K, Kasuga M, Shimizu A (1997) Jpn J Appl Phys 36:L1453CrossRefGoogle Scholar
  5. 5.
    Joseph M, Tabata H, Kawai T (1999) Jpn J Appl Phys 38(L1205):L1205CrossRefGoogle Scholar
  6. 6.
    Minami T, Shimokawa K, Miyata T (1998) J Vac Sci Technol A 16(3):1218CrossRefGoogle Scholar
  7. 7.
    Jayaraj MK, Draeseke AD, Tate J, Sleight AW (2001) Thin Solid Films 397:244CrossRefGoogle Scholar
  8. 8.
    Nagarajan R, Draeseke AD, Sleight AW, Tate J (2001) J Appl Phys 89:8022CrossRefGoogle Scholar
  9. 9.
    Duan N, Sleight AW, Jayaraj MK, Tate J (2000) Appl Phys Lett 77:1325CrossRefGoogle Scholar
  10. 10.
    Tate J, Jayaraj MK, Draeseke AD, Ulbrich T, Sleight AW, Vanaja KA, Nagarajan R, Wager JF, Hoffman RL (2002) Thin Solid Films 411:119CrossRefGoogle Scholar
  11. 11.
    Windisch CF Jr, Exarhos GJ, Ferris KF, Engelhard MH, Stewart DC (2001) Thin Slid Films 398–399:45CrossRefGoogle Scholar
  12. 12.
    Suzuki S, Miyata T, Minami T (2003) J Vac Sci Technol A 21(4):1336CrossRefGoogle Scholar
  13. 13.
    Rakhshani AE (1986) Solid State Electronic 29:7CrossRefGoogle Scholar
  14. 14.
    Lu YM, Hwang WS, Yang JS, Chuang HC (2002) Thin Solid Films 420–421:54CrossRefGoogle Scholar
  15. 15.
    Puspharajah P, Radhakrishna S, Arof AK (1997) J Mat Sci 32:3001CrossRefGoogle Scholar
  16. 16.
    Tanaka M, Mukai M, Fujimori Y, Kondoh M, Tasaka Y, Baba H, Usami S (2002) Thin Solid Films 281:119Google Scholar
  17. 17.
    Fujii E, Tomozawa A, Torii H, Takayama R (1996) Jpn J Appl Phys 35:L328CrossRefGoogle Scholar
  18. 18.
    Ishizuka S, Maruyama T, Akimoto K (2000) Jpn J Appl Phys 39:L786CrossRefGoogle Scholar
  19. 19.
    Mizuno K, Izaki M, Murase K, Shinagawa T, Chigane M, Inaba M, Tasaka A, Awakura Y (2005) J Electrochem Soc 152:C179CrossRefGoogle Scholar
  20. 20.
    Tabuchi N, Matsumura H (2002) Jpn J Appl Phys 41:5060CrossRefGoogle Scholar
  21. 21.
    Pankov IJ (1975) Optical processes in semiconductors. Dover Publications Inc, New YorkGoogle Scholar
  22. 22.
    Santra K, Sarkar CK, Mukherjee MK, Ghosh B (1992) Thin Solid Films 213:226CrossRefGoogle Scholar
  23. 23.
    Minami T, Tanaka H, Shimakawa T, Miyata T, Sato H (2004) Jpn J Appl Phys 43:L917CrossRefGoogle Scholar
  24. 24.
    Kleinman L, Mednick K (1980) Phys Rev B 21:1549CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Toshihiro Miyata
    • 1
  • Hideki Tanaka
    • 2
  • Hirotoshi Sato
    • 2
  • Tadatsugu Minami
    • 1
  1. 1.Optoelectronic Device System R&D CenterKanazawa Institute of TechnologyNonoichiJapan
  2. 2.Research and Development CenterGunze LimitedMoriyamaJapan

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