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Journal of Materials Science

, Volume 41, Issue 2, pp 467–470 | Cite as

Reproducibility and stability of N–Al codoped p-type ZnO thin films

  • J. G. Lu
  • L. P. Zhu
  • Z. Z. Ye
  • F. Zhuge
  • B. H. Zhao
  • D. W. Ma
  • L. Wang
  • J. Y. Huang
Article

Abstract

Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017 cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent.

Keywords

Storage Period Hall Mobility Hall Measurement Good Crystallinity Mass Spectroscopy Measurement 

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Copyright information

© Springer Science + Business Media, Inc. 2006

Authors and Affiliations

  • J. G. Lu
    • 1
  • L. P. Zhu
    • 1
  • Z. Z. Ye
    • 1
  • F. Zhuge
    • 1
  • B. H. Zhao
    • 1
  • D. W. Ma
    • 1
  • L. Wang
    • 1
  • J. Y. Huang
    • 1
  1. 1.State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhouPeople's Republic of China

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