Metal induced crystallization: Gold versus aluminium
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In this work metal induced crystallization was studied using aluminium and gold deposited over 150 nm amorphous silicon films grown by LPCVD. Aluminium and gold layers with thickness between 1 and 5 nm were deposited on the silicon films and after that, the samples were annealed at 500∘C from 5 up to 30 h. When the crystallization is induced through a gold layer, the Si crystalline fraction is higher than when using aluminium. For samples crystallized for 30 h at 500∘C with 2 nm of metal a crystalline fraction of 57.5% was achieved using gold and only 38.7% when using aluminium.
KeywordsPolymer Aluminium Silicon Gold Crystallization
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- 2.S.-I. MURAMATSU, Y. MINAGAWA, F. OKA, T. SASAKI and Y. YAZAWA, Sol. Energy Mater. Sol. Cells 74 (2002) 275.Google Scholar
- 4.S. Y. YOON, K. H. KIM, C. O. KIM, J. Y. OH and J. JANG, J. Appl. Phys. 82 (1997) 5865.Google Scholar
- 6.D. A. G. BRUGGEMANN, Ann. Phys.(Leipzig) 24 (1935) 636.Google Scholar
- 11.O. NAST, S. BREHME, S. PRITCHARD, A. G. ABERLE and S. R. WENHAM, Sol. Energy Mater. Sol. Cells 65 (2001) 382.Google Scholar
- 13.R. J. JACCODINE, J. Electrochem. Soc. 110 (1963) 524.Google Scholar