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Journal of Electronic Testing

, Volume 33, Issue 1, pp 37–51 | Cite as

Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI’s Using Universal Rad-SPICE MOSFET Model

  • Konstantin O. PetrosyantsEmail author
  • Lev M. Sambursky
  • Igor A. Kharitonov
  • Boris G. Lvov
Article

Abstract

The methodology of modeling and simulation of environmentally induced faults in radiation hardened SOI/SOS CMOS IC’s is presented. It is realized at three levels: CMOS devices – typical analog or digital circuit fragments – complete IC’s. For this purpose, a universal compact SOI/SOS MOSFET model for SPICE simulation software with account for TID, dose rate and single event effects is developed. The model parameters extraction procedure is described in great depth taking into consideration radiation effects and peculiarities of novel radiation-hardened (RH) SOI/SOS MOS structures. Examples of radiation-induced fault simulation in analog and digital SOI/SOS CMOS LSI’s are presented for different types of radiation influence. The simulation results show the difference with experimental data not larger than 10–20% for all types of radiation.

Keywords

SOI CMOS circuits Fault modeling and simulation Radiation hardness TID Dose rate Single events Compact SPICE models Novel RH SOI MOS structures Model parameter extraction 

Notes

Acknowledgments

This work was supported in part by the Academic Fund Program at the National Research University Higher School of Economics in 2015, grant No. 15-01-0165, and Russian Foundation for Basic Research, grant No.14-29-09145.

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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  • Konstantin O. Petrosyants
    • 1
    • 2
    Email author
  • Lev M. Sambursky
    • 1
    • 2
  • Igor A. Kharitonov
    • 1
  • Boris G. Lvov
    • 1
  1. 1.Department of Electronics Engineering, Moscow Institute of Electronics and MathematicsNational Research University Higher School of EconomicsMoscowRussia
  2. 2.Department of Analog Circuits Design Automation, Institute for Design Problems in MicroelectronicsRussian Academy of SciencesMoscowRussia

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