Journal of Electroceramics

, Volume 32, Issue 4, pp 319–323 | Cite as

Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios

Article
First Online:
Received:
Accepted:

Abstract

Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process, prepared by dissolving 0.2 M of zinc acetate dihydrate and tin chloride dihydrate in 20 mL of 2-methoxyethanol. All ZTO thin films showed amorphous phases and no impurities (no carbon and chlorine content) even at process temperature of 350 °C. As the Sn ratio in ZTO films increased, the values of saturated mobility (usat) and subthreshold gate swing (SS) exhibited a parabolic behavior in ZTO TFTs, depicting that the μsat and SS values were a maximum (3.4 cm2/V.s) and minimum (0.38 V/decade) at Zn/Sn = 1 ratio. Interestingly, the x-ray absorption and X-ray photoemission spectroscopy revealed the origin of parabolic behavior, indicating not only to improve a charge transport in conduction bands but also to increase the Sn4+/Sn2+ ratio at the peak values (Sn/(Zn + Sn) = 1).

Keywords

Thin film transistor Oxide semiconductor Solution process 
This is a preview of subscription content, log in to check access.

Notes

Acknowledgments

This work was partially supported by the IT R&D program of MKE/KEIT (Grant No. 10041416, The core technology development of light and space adaptable new mode display for energy saving on 7 in and 2 W) and partially supported by the MSIP under the ITRC support program (NIPA-2013-H0301-13-1004) supervised by the NIPA.

References

  1. 1.
    J.S. Park, W.-J. Maeng, H.-S. Kim, J.-S. Park, Thin Solid Films 520, 1679–1693 (2012)CrossRefGoogle Scholar
  2. 2.
    J.-S. Park, H. Kim, I.-D. Kim, J. Electroceram. (2013). doi: 10.1007/s10832-013-9858-0 Google Scholar
  3. 3.
    H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono, Appl. Phys. Lett. 89, 112–123 (2006)CrossRefGoogle Scholar
  4. 4.
    H.-S. Kim, J.-S. Park, J. Electroceram. (2013). doi: 10.1007/s10832-013-9876-y Google Scholar
  5. 5.
    J.Y. Choi, S.S. Kim, S.Y. Lee, Appl. Phys. Lett. 100, 022109 (2012)CrossRefGoogle Scholar
  6. 6.
    C.Y. Koo, D. Kim, S. Jeong, C. Park, M. Jeon, W.-C. Sin, J. Jung, H.-J. Woo, S.-H. Kim, J. Ha, J. Moon, J. Korean Phys. Soc. 53(1), 218–222 (2008)Google Scholar
  7. 7.
    D.-H. Lee, Y.-J. Chang, G.S. Herman, C.-H. Chang, Adv. Mater. 19, 843–847 (2007)CrossRefGoogle Scholar
  8. 8.
    D.H. Cho, S.H. Ko Park, S.H. Yang, C.W. Byun, K.I. Cho, M.K. Ryu, S.M. Chung, W.S. Cheong, S.M. Yoon, C.S. Hwang, J. Inf. Display 10, 137 (2009)CrossRefGoogle Scholar
  9. 9.
    W.J. Park, H.S. Shin, B. Du Ahn, G.H. Kim, S.M. Lee, K.H. Kim, H.J. Kim, Appl. Phys. Lett. 93, 083508 (2008)CrossRefGoogle Scholar
  10. 10.
    S.-J. Seo, C.G. Choi, Y.H. Hwang, B.-S. Bae, J. Phys. D. Appl. Phys. 42, 035106 (2009). 5ppCrossRefGoogle Scholar
  11. 11.
    K. Song, D. Kim, X.-S. Li, T. Jun, Y. Jeong, J. Moon, J. Mater. Chem. 19, 8881–8886 (2009)CrossRefGoogle Scholar
  12. 12.
    S. Jeong, Y. Jeong, J. Moon, J. Phys. Chem. C 112(30), 11082–11085 (2008)CrossRefGoogle Scholar
  13. 13.
    P. O’Brien, T. Saeed, J. Knowled, J. Mater. Chem. 6(7), 1135–1139 (1996)CrossRefGoogle Scholar
  14. 14.
    K. Song, Y. Jeong, T. Jun, C.Y. Koo, D. Kim, K. Woo, A. Kim, J. Noh, S. Cho, J. Moon, Jpn. J. Appl. Phys. 49, 05EB02 (2010)Google Scholar
  15. 15.
    R.L. Hoffman, Solid State Electron 50, 784–787 (2006)CrossRefGoogle Scholar
  16. 16.
    M.G. McDowell, R.J. Sanderson, I.G. Hill, Appl. Phys. Lett. 92, 013502 (2008)CrossRefGoogle Scholar
  17. 17.
    K.B. Chung, J.P. Long, H. Seo, G. Lucovsky, D. Nordlund, J. Appl. Phys. 106, 074102 (2009)CrossRefGoogle Scholar
  18. 18.
    H. Yabuta, N. Kaji, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, Appl. Phys. Lett. 97, 072111 (2010)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  1. 1.Division of Materials Science and EngineeringHanyang UniversitySeoulSouth Korea
  2. 2.Department of PhysicsDongguk UniversitySeoulSouth Korea

Personalised recommendations