Journal of Electroceramics

, Volume 19, Issue 1, pp 49–67

Domain wall contributions to the properties of piezoelectric thin films

  • Nazanin Bassiri-Gharb
  • Ichiro Fujii
  • Eunki Hong
  • Susan Trolier-McKinstry
  • David V. Taylor
  • Dragan Damjanovic
Article

DOI: 10.1007/s10832-007-9001-1

Cite this article as:
Bassiri-Gharb, N., Fujii, I., Hong, E. et al. J Electroceram (2007) 19: 49. doi:10.1007/s10832-007-9001-1

Abstract

In bulk ferroelectric ceramics, extrinsic contributions associated with motion of domain walls and phase boundaries are a significant component of the measured dielectric and piezoelectric response. In thin films, the small grain sizes, substantial residual stresses, and the high concentration of point and line defects change the relative mobility of these boundaries. One of the consequences of this is that thin films typically act as hard piezoelectrics. This paper reviews the literature in this field, emphasizing the difference between the nonlinearities observed in the dielectric and piezoelectric properties of films. The effect of ac field excitation levels, dc bias fields, temperature, and applied mechanical stress are discussed.

Keywords

Review Domain walls Piezoelectric thin films 

Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Nazanin Bassiri-Gharb
    • 1
    • 2
    • 4
  • Ichiro Fujii
    • 1
    • 2
  • Eunki Hong
    • 1
    • 2
  • Susan Trolier-McKinstry
    • 1
    • 2
  • David V. Taylor
    • 3
    • 5
  • Dragan Damjanovic
    • 3
  1. 1.Materials Research InstituteThe Pennsylvania State UniversityUniversity ParkUSA
  2. 2.Materials Science and Engineering DepartmentThe Pennsylvania State UniversityUniversity ParkUSA
  3. 3.Ceramics LaboratorySwiss Federal Institute of Technology (EPFL)LausanneSwitzerland
  4. 4.Materials and Device R&DQUALCOMM MEMS Technologies, IncorporatedSan JoseUSA
  5. 5. Nanosys Inc.Palo AltoUSA

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