Journal of Electroceramics

, Volume 16, Issue 4, pp 571–574 | Cite as

Structural properties and dopant-modified bandgap energies of Ba0.5Sr0.5TiO3thin films grown on LaAlO3substrates

  • Y. B. Zheng
  • S. J. Wang
  • L. B. Kong
  • S. Tripathy
  • A. C. H. Huan
  • C. K. Ong
Section 2: Thin Film


Ba0.5Sr0.5TiO3 thin films doped with different concentration of Ti, Mg and Al dopants were prepared by pulsed laser deposition technique on LaAlO3 substrates. The crystalline properties of these doped thin films were studied using X-ray diffraction, micro-Raman scattering, atomic force microscopy, and transmission electron microscopy. The bandgap energies of BST thin films are determined from the transmission and absorption measurements by the ultraviolet-visible spectrophotometer. It was found out that the bandgap energies of the doped BST thin films depend strongly on the dopant concentration.


Band structure Dopants Ferroelectric thin films 


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Copyright information

© Springer Science + Business Media, LLC 2006

Authors and Affiliations

  • Y. B. Zheng
    • 1
  • S. J. Wang
    • 1
  • L. B. Kong
    • 2
  • S. Tripathy
    • 1
  • A. C. H. Huan
    • 1
    • 3
  • C. K. Ong
    • 4
  1. 1.Institute of Materials Research & EngineeringSingapore
  2. 2.Temasek LaboratoryNational University of SingaporeSingapore
  3. 3.Division of Physics and Applied PhysicsNanyang Technological UniversitySingapore
  4. 4.Department of PhysicsNational University of SingaporeSingapore

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