Structural properties and dopant-modified bandgap energies of Ba0.5Sr0.5TiO3thin films grown on LaAlO3substrates
Ba0.5Sr0.5TiO3 thin films doped with different concentration of Ti, Mg and Al dopants were prepared by pulsed laser deposition technique on LaAlO3 substrates. The crystalline properties of these doped thin films were studied using X-ray diffraction, micro-Raman scattering, atomic force microscopy, and transmission electron microscopy. The bandgap energies of BST thin films are determined from the transmission and absorption measurements by the ultraviolet-visible spectrophotometer. It was found out that the bandgap energies of the doped BST thin films depend strongly on the dopant concentration.
KeywordsBand structure Dopants Ferroelectric thin films
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