Noise performance of avalanche transit-time devices in the presence of acoustic phonons

  • Girish Chandra GhivelaEmail author
  • Joydeep Sengupta


Through this paper, the effects of acoustic phonons on the noise performance of avalanche transit-time devices have been investigated and reported. For this study, a double-drift-region silicon-based impact avalanche transit-time diode has been considered at operating frequencies of 94 GHz, 140 GHz and 220 GHz. To analyze the acoustic phonon effects on noise performance, the interactions of charge carriers with acoustic deformation potential and piezoelectric acoustic phonons have been considered in addition to all possible types of scattering events. These effects have been analyzed through a numerical expression for the ionization rate of charge carriers and incorporated in the noise analysis. The noise performance is evaluated in terms of noise spectral density (NSD) and noise measure (NM). The results show that due to acoustic phonons, values of NSD and NM significantly increase.


Acoustic phonon Deformation potential Noise Ionization rate Avalanche Drift 



This work was supported by the Department of Electronics and Communication Engineering, VNIT, Nagpur, India. The authors are grateful to the Ministry of Human Resource Development, Government of India, for providing research assistantship to G.C. Ghivela.


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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.EMI-EMC Lab, Department of Electronics and Communication EngineeringVisvesvaraya National Institute of TechnologyNagpurIndia

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