Fully depleted three-gate silicon MESFET on SOI material: analytical modeling and simulation

  • Hossein Mohammadi
  • Huda Abdullah
  • Dee Chang Fu
  • P. Susthitha Menon
  • Iraj Sadegh Amiri


An innovative type of device for high-density and high-speed applications, three-gate (TG) SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against short channel effects (SCEs) and leakage current. To investigate the superior subthreshold characteristics of the suggested device, a physically based analytical model for channel potential and threshold voltage is developed. The model is based on the analytical solution of the three-dimensional Poisson equation with suitable boundary conditions. Using the model, the design features for the important device parameters and bias condition are examined and compared with classical SOI-MESFET. The accuracy of the model is validated by comparing the analytical results with Silvaco simulation and experimental data.


Three-gate SOI-MESFET Potential distribution Threshold voltage Subthreshold current Drain induced barrier lowering (DIBL) 3-D analytical model TCAD simulation 


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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • Hossein Mohammadi
    • 1
  • Huda Abdullah
    • 1
  • Dee Chang Fu
    • 2
  • P. Susthitha Menon
    • 2
  • Iraj Sadegh Amiri
    • 3
    • 4
  1. 1.Department of Electrical, Electronic and Systems Engineering, Faculty of EngineeringUniversiti Kebangsaan Malaysia (UKM)BangiMalaysia
  2. 2.Institute of Microengineering and Nanoelectronics (IMEN)Universiti Kebangsaan Malaysia (UKM)BangiMalaysia
  3. 3.Computational Optics Research Group, Advanced Institute of Materials ScienceTon Duc Thang UniversityHo Chi Minh CityVietnam
  4. 4.Faculty of Applied SciencesTon Duc Thang UniversityHo Chi Minh CityVietnam

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