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Threshold voltage modeling for a Gaussian-doped junctionless FinFET

  • Shalu Kaundal
  • Ashwani K. Rana
Article
  • 23 Downloads

Abstract

This work presents two-dimensional (2D) analytical modeling of the threshold voltage of a double-gate junctionless FinFET with a Gaussian-doped channel by evaluating the 2D electrostatic potential distribution across the active area of the device. The influence of the fringing field lines through the spacer is also included in the modeling. To confirm the validity of the derived analytical model, technology computer-aided design (TCAD) device simulations were carried out. Furthermore, the impact of various design parameters on the threshold voltage was also studied.

Keywords

Junctionless Modeling FinFET Nonuniform Gaussian channel Poisson equation 

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Electronics and Communication Engineering DepartmentNIT HamirpurHamirpurIndia

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