Journal of Computational Electronics

, Volume 17, Issue 1, pp 238–245 | Cite as

A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch

  • Yijun Shi
  • Wanjun Chen
  • Fangzhou Wang
  • Jie Liu
  • Xingtao Cui
  • Guanhao Hu
  • Chao Liu
  • Zhaoji Li
  • Qi Zhou
  • Bo Zhang


In this work, a novel GaN-based reverse blocking metal–insulator–semiconductor high electron mobility transistor (RB-MISHEMT) with enhancement mode (E-mode) is investigated by the TCAD simulation. To enable the device with capability of blocking reverse current, a MIS field-effect drain consisting of electrically shorted ohmic and recessed MIS structure is adopted. The proposed GaN E-mode RB-MISHEMT features a low reverse current of 10 \(\upmu \)A at − 900 V and a low turn-on voltage of drain electrode of 0.38 V at 10 mA. On-state power loss of the bidirectional switch based on proposed GaN E-mode RB-MISHEMT shows a 34% reduction compared with that of the bidirectional switch based on GaN E-mode reverse conducting MISHEMT. And the proposed E-mode RB-MISHEMT is also compatible with standard E-mode MISHEMT. The high performance and processing compatibility of the proposed GaN RB-MISHEMT show that the device is promising for future power applications.


GaN MISHEMT Reverse blocking MIS-FED Bidirectional switch Specific on-resistance 



This research is funded in part by the Sichuan Youth Science and Technology Foundation (No. 2017JQ0020), the Fundamental Research Funds for the Central Universities (No. ZYGX2016Z006) and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030311016).


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Copyright information

© Springer Science+Business Media, LLC 2017

Authors and Affiliations

  • Yijun Shi
    • 1
  • Wanjun Chen
    • 1
    • 2
  • Fangzhou Wang
    • 1
  • Jie Liu
    • 1
  • Xingtao Cui
    • 1
  • Guanhao Hu
    • 1
  • Chao Liu
    • 1
  • Zhaoji Li
    • 1
  • Qi Zhou
    • 1
  • Bo Zhang
    • 1
  1. 1.State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of China (UESTC)ChengduChina
  2. 2.Institute of Electronic and Information Engineering of UESTC in GuangdongDongguanChina

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