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Journal of Computational Electronics

, Volume 16, Issue 3, pp 556–567 | Cite as

Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor

  • Avik Chakraborty
  • Angsuman Sarkar
Article

Abstract

An analytical model of dielectric-modulated junctionless gate-stack surrounding gate MOSFET for application as a biosensor is presented. An expression for the channel-center potential is obtained by solving the 2-D Poisson’s equation using a parabolic-potential approach. An analytical model for the threshold voltage is developed from the minimum channel-center potential to analyze the sensitivity of the biosensor. Moreover, the effects of the variation of the different device dimensional parameters on the sensitivity of the biosensor were investigated in order to study the dielectric modulation effects due to the permittivity changes by the biomolecules present within the nanogap cavity. The analytical model is verified and validated with the help of TCAD device simulations.

Keywords

Biosensors Junctionless Surrounding gate MOSFET Channel-center potential Analytical model Threshold voltage 

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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  1. 1.ECE DepartmentBengal Institute of Technology and ManagementBolpurIndia
  2. 2.ECE DepartmentKalyani Government Engineering CollegeKalyaniIndia

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