Advertisement

Journal of Computational Electronics

, Volume 15, Issue 1, pp 163–171 | Cite as

A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage

  • Zeinab Ramezani
  • Ali A. Orouji
  • Hassan Agharezaei
Article

Abstract

In this paper, a novel symmetrical structure (SS) of 4H–SiC metal semiconductor field effect transistor (MESFET) as an effective way to improve the breakdown voltage is presented. The key idea in this work is to improve the breakdown voltage, maximum output power density, and frequency parameters of the device using a symmetrical structure with recessed gate. The SS-MESFET modifies the electric field in the drift layer significantly. The influence of the SS-MESFET on the saturation current, breakdown voltage \((\hbox {V}_{\mathrm{BR}})\), and small-signal characteristics of the SS-MESFET are studied by numerical device simulation. Using two-dimensional device simulation, we demonstrate that the breakdown voltage \((\hbox {V}_{\mathrm{BR}})\) improved by factors 2.5 and 3.3 in comparison with an asymmetrical conventional MESFET structure (AC-MESFET) and a symmetrical conventional MESFET structure (SC-MESFET), respectively. Also, the maximum output power density \((\hbox {P}_{\mathrm{max}})\) improved about by 93 and 250 % in comparison with the AC-MESFET and SC-MESFET structures, respectively. So, the SS-MESFET shows the superior maximum available gain (MAG), unilateral power gain (U), and current gain \((\hbox {h}_{12})\) which is presenting the proposed structure is more suitable device for high power microwave applications.

Keywords

4H–SiC MESFET Gate-drain capacitance Maximum output power density 

References

  1. 1.
    Zhu, C.L., Rusli, Tin, C.C., Zhang, G.H., Yoon, S.F., Ahn, J.: Improved performance of SiC MESFETs using double-recessed structure. Microelectron. Eng. 83, 92–95 (2005)CrossRefGoogle Scholar
  2. 2.
    Deng, X., Zhang, B., Li, Z., Chen, Z.: Numerical analysis on the 4H-SiC MESFETs with a source field plate. Semicond. Sci. Technol. 22, 701 (2007)CrossRefGoogle Scholar
  3. 3.
    Ya, L., Sheng, K.: Modeling and optimal device design for 4H-SiC super-junction devices. IEEE Trans. Electron Devices 55(8), 1961–1969 (2008)CrossRefGoogle Scholar
  4. 4.
    Weitzel, C.E., Palmour, J.W., Carter, C.H., Nordquist, K.J.: 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz. IEEE Electron Device Lett. 15(10), 406–408 (1994)CrossRefGoogle Scholar
  5. 5.
    Ramezani, Zeinab, Orouji, Ali A., Keshavarzi, P.: A novel double-recessed 4H-SiC MESFET using scattering the electric field for high power and RF applications. Phys. E 59, 202–209 (2014)CrossRefGoogle Scholar
  6. 6.
    Aminbeidokhti, A., Orouji, Ali A.: A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications. Phys. E 44(3), 708–713 (2011)CrossRefGoogle Scholar
  7. 7.
    Ramezani, Z., Orouji, A.A.: Improving self heating effect and maximum power density in SOI MESFETs by using the Hole’s well under channel. IEEE Trans. Electron Devices 61(10) (2014)Google Scholar
  8. 8.
    Elahipanah, Hossein: Record gain at 3.1 GHz of 4H-SiC high power RF MESFET. Microelectron. J. 42, 299–30 (2011)CrossRefGoogle Scholar
  9. 9.
    Ramezani, Zeinab, Orouji, Ali A., Rahimian, Morteza: High-performance SOI MESFET by modified depletion region using a triple recessed gate. Mater. Sci. Semicond. Process. 30, 75–84 (2015)CrossRefGoogle Scholar
  10. 10.
    Duan, B.X., Yang, Y.T., Zhang, B., Hong, X.F.: Folded accumulation LDMOST (FALDMOST): new power mos transistor with very low specific on-resistance. IEEE Electron Device Lett. 30(12), 1329–1331 (2009)CrossRefGoogle Scholar
  11. 11.
    Orouji, Ali, A., Ramezani, Zeinab, Heydari, Akram Anbar: A Novel High-Performance SOI MESFET by Stopping the Depletion Region Extension. Superlattices Microstruct. 75, 195–207 (2014)CrossRefGoogle Scholar
  12. 12.
    Duan, B.X., Yang, Y.T.: Low specific on-resistance power MOS transistor with multi-layer carrier accumulation breaks the limit line of silicon. IEEE Trans. Electron Devices 58(7), 2057–2060 (2011)CrossRefGoogle Scholar
  13. 13.
    Ramezani, Zeinab, Orouji, Ali A.: A silicon-on-insulator metal-semiconductor field-effect transistor with an L-shaped buried oxide for high output-power density. Mater. Sci. Semicond. Process. 19, 124–129 (2014)CrossRefGoogle Scholar
  14. 14.
    Moghadam, H.Amini, Orouji, Ali A.: Design and performance considerations of novel 4H-SiC MESFET with a p-type pillar for increasing breakdown voltage. Phys. E 43(10), 1779–1782 (2011)CrossRefGoogle Scholar
  15. 15.
    Device Simulator Atlas: Atlas User’s Manual, Senta Clara, CA. Silvaco Int, Softw (June 2012)Google Scholar
  16. 16.
    Ruff, M., Mitlehner, H., Helbig, R.: SiC devices: physics and numerical simulation. IEEE Trans. Electron Devices 41, 1040–1054 (1994)CrossRefGoogle Scholar
  17. 17.
    Baliga, B.J.: Modern Power Devices. Wiley Interscience, New York (1987)Google Scholar
  18. 18.
    Na, H.J., Moon, J.H., Yim, J.H., Lee, J.B., Kim, H.J.: Fabrication and characterization of 4H-SiC planar MESFETs. Microelectron. Eng. 83(1), 160–164 (2006)CrossRefGoogle Scholar
  19. 19.
    Sze, S.M., Ng, K.K.: Physics of Semiconductor Devices, 3rd edn. Wiley, Hoboken (2007)Google Scholar
  20. 20.
    Mahabadi, S.E.J., Orouji, A.A., Keshavarzi, P., Moghadam, H.A.: A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage. Semicond. Sci. Technol. 26, 95005–95016 (2011)CrossRefGoogle Scholar
  21. 21.
    Zhang, J., Luo, X., Li, Z., Zhang, B.: Improved double-recessed 4HSiC MESFETs structure with recessed source/drain drift region. Microelectron. Eng. 84, 2888–2891 (2007)Google Scholar
  22. 22.
    Trew, R.J.: High-frequency solid-state electronic devices. IEEE Trans. Electron Devices 52, 638–649 (2005)CrossRefGoogle Scholar
  23. 23.
    Dal Fabbro, P.A., Kayal, M.: Linear CMOS RF Power Amplifiers for Wireless Applications. Springer, Berlin (2010)CrossRefGoogle Scholar
  24. 24.
    Singh, J.: Semiconductor Devices: Basic Principles, 1st edn. Wiley, New York (2001)Google Scholar

Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Zeinab Ramezani
    • 1
  • Ali A. Orouji
    • 1
  • Hassan Agharezaei
    • 1
  1. 1.Electrical and Computer Engineering DepartmentSemnan UniversitySemnanIran

Personalised recommendations