Journal of Computational Electronics

, Volume 14, Issue 2, pp 398–408 | Cite as

Multiscale approaches for the simulation of InGaN/GaN LEDs

  • Matthias Auf der MaurEmail author


In this work we review basic aspects of multiscale approaches for combining atomistic with continuous media descriptions and quantum mechanical with semiclassical drift–diffusion transport models for LED simulations. We show how hybrid coupling of the Green’s function formalism with drift–diffusion simulations can give additional insight into device behaviour without compromising too much computational efficiency, and that the inclusion of atomistic tight-binding calculations in a multiscale framework can help in understanding specific features related to alloy fluctuations.


LED simulation GaN Multiscale modeling Atomistic models Random alloy 



The author gratefully acknowledges A. Pecchia, G. Penazzi, F. Sacconi and A. Di Carlo for fruitful discussions, and the FP7-ICT Project NEWLED, No. FP7-318388, for financial support.

Conflict of interest

The author declares to have no conflict of interest.


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© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Department of Electronic EngineeringUniversity of Rome “Tor Vergata”RomeItaly

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