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Journal of Computational Electronics

, Volume 14, Issue 1, pp 94–106 | Cite as

Suppressed and enhanced shot noise in one dimensional field-effect transistors

  • Giuseppe Iannaccone
  • Alessandro Betti
  • Gianluca Fiori
Article

Abstract

Landauer–Büttiker shot noise formula only considers the impact of Pauli exclusion principle on noise, but not the impact of Coulomb repulsion among carriers. A theory recently derived by the authors is able to include also the impact of Coulomb repulsion, and provides a computational methodology to obtain noise properties on a more complete physical basis. We review recent results from the application of this methodology with the use of in-house developed computational electronics tools. We show that in a one-dimensional FET, electrostatic repulsion among charge carriers in the channel can be responsible for strongly suppressed or enhanced shot noise with respect to the Poissonian Noise, or to the noise level provided by Landauer–Büttiker formula. This is very relevant for device and circuit design, since current semiconductor technology evolution has brought nanoscale FETs very close to the limit of one-dimensional FETs.

Keywords

One-dimensional transistors Carbon nanotube transistors Shot noise 

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Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  • Giuseppe Iannaccone
    • 1
  • Alessandro Betti
    • 1
  • Gianluca Fiori
    • 1
  1. 1.Dipartimento di Ingegneria dell’InformazioneUniversità di PisaPisaItaly

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