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Journal of Computational Electronics

, Volume 13, Issue 3, pp 733–738 | Cite as

Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

  • S. E. Tyaginov
  • Yu. Yu. IllarionovEmail author
  • M. I. Vexler
  • M. Bina
  • J. Cervenka
  • J. Franco
  • B. Kaczer
  • T. Grasser
Article

Abstract

We model the main characteristics of metal-insulator-silicon field-effect transistors (MISFETs) with different gate insulators using the carrier energy distribution function calculated with a Spherical Harmonics Expansion method. In addition to standard devices with Silicon Dioxide or Oxynitride we study a hypothetical MISFET with a rather new crystalline dielectric-Calcium Fluoride. The real physical parameters of the \(\hbox {CaF}_{2}\)/Si tunnel barrier are used in our simulations. The obtained characteristics of the transistors with \(\hbox {CaF}_{2}\) are, in some details, better than those of the devices with traditional oxides. Being a step forward in the context of the industrial implementation of fluorite, this work opens the possibility of simulating the characteristics of different silicon-based devices with crystalline insulators.

Keywords

Calcium fluoride Gate insulator Electron energy distribution function MISFET Boltzmann transport equation 

Notes

Acknowledgments

The authors acknowledge support by the Austrian Science Fund (FWF), Grants Nos. P23598 and P26382, and the European Community FP7 Projects Nos. 261868 (MORDRED) and 619246 (ATHENIS 3D).

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • S. E. Tyaginov
    • 1
    • 2
  • Yu. Yu. Illarionov
    • 1
    • 2
    Email author
  • M. I. Vexler
    • 2
  • M. Bina
    • 1
  • J. Cervenka
    • 1
  • J. Franco
    • 3
  • B. Kaczer
    • 3
  • T. Grasser
    • 1
  1. 1.Vienna University of TechnologyViennaAustria
  2. 2.Ioffe Physical-Technical InstituteSaint PetersburgRussia
  3. 3.IMECLouvainBelgium

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