Journal of Computational Electronics

, Volume 12, Issue 4, pp 692–700 | Cite as

Benchmarking of GFET devices for amplifier application using multiscale simulation approach

  • Sebastien Fregonese
  • Manuel Potereau
  • Nathalie Deltimple
  • Cristell Maneux
  • Thomas Zimmer


Starting from advanced NEGF physical simulation of a 100 nm gate length Graphene FET, we attempt to use these results as a starting point to evaluate this technology for microwave circuit benchmarking. Using an improved compact model carefully adjusted on NEGF simulation data, in both DC and AC regime, we use this model to design a mmW amplifier at 140 GHz. In the first part of the design procedure, we use the ADS compact model for coplanar waveguide of passive elements. The complete design is then verified using electromagnetic FEM simulation which gives more reliable results at very high frequencies for passive elements and interconnections. This analysis has shown that unlike first GFET generations, impedance matching problems may be naturally solved with transistor performance improvements. Finally, the GFET device and circuit is compared to HEMT technologies and shows promising performances.


GFET Milli-meter wave amplifier Graphene Model Circuit 



This work is part of the GRADE project supported by the European Commission through the Seventh Framework Program for Research and Technological Development and is also supported by the French National Research Agency (ANR) through the P2N “GRACY” project.


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Sebastien Fregonese
    • 1
  • Manuel Potereau
    • 1
  • Nathalie Deltimple
    • 1
  • Cristell Maneux
    • 1
  • Thomas Zimmer
    • 1
  1. 1.CNRS, UMR 5218, Laboratoire IMSUniversité de BordeauxBordeauxFrance

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