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Journal of Computational Electronics

, Volume 9, Issue 3–4, pp 146–152 | Cite as

Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique

  • Alexander MakarovEmail author
  • Viktor Sverdlov
  • Siegfried Selberherr
Article

Abstract

A stochastic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. This result indicates that a decrease of the switching time with increasing temperature cannot be explained only by reduced occupations of the vacancies in the low occupation region, but is related to an increase of the mobility of the oxide ions. A hysteresis cycle of RRAM switching simulated with the stochastic model including the ion dynamics is in good agreement with experimental results.

Keywords

Resistive switching mechanism Stochastic model Monte Carlo method RRAM 

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Copyright information

© Springer Science+Business Media LLC 2010

Authors and Affiliations

  • Alexander Makarov
    • 1
    Email author
  • Viktor Sverdlov
    • 1
  • Siegfried Selberherr
    • 1
  1. 1.Institute for MicroelectronicsVienna University of TechnologyViennaAustria

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