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Journal of Computational Electronics

, Volume 7, Issue 3, pp 394–397 | Cite as

Computational study of double-gate graphene nano-ribbon transistors

  • Gengchiau Liang
  • Neophytos Neophytou
  • Mark S. Lundstrom
  • Dmitri E. Nikonov
Article

Abstract

The ballistic performance of graphene nanoribbon (GNR) MOSFETs with different width of armchair GNRs is examined using a real-space quantum simulator based on the Non-equilibrium Green’s Function (NEGF) approach, self-consistently coupled to a 3D Poisson’s equation for electrostatics. GNR MOSFETs show promising device performance, in terms of low subthreshold swing and small drain-induced-barrier-lowing due to their excellent electrostatics and gate control (single monolayer). However, the quantum tunneling effects play an import role in the GNR device performance degradation for wider width GNR MOSFETs due to their reduced bandgap. At 2.2 nm width, the OFF current performance is completely dominated by tunneling currents, making the OFF-state of the device difficult to control.

Keywords

MOSFETs Graphene nanoribbon Transistors NEGF Quantum tunneling 

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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  • Gengchiau Liang
    • 1
  • Neophytos Neophytou
    • 2
  • Mark S. Lundstrom
    • 2
  • Dmitri E. Nikonov
    • 3
  1. 1.Department of Electrical and Computer EngineeringNational University of SingaporeSingaporeSingapore
  2. 2.School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteUSA
  3. 3.Technology and Manufacturing GroupIntel Corp., SC1-05Santa ClaraUSA

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