Computational study of double-gate graphene nano-ribbon transistors
- 289 Downloads
The ballistic performance of graphene nanoribbon (GNR) MOSFETs with different width of armchair GNRs is examined using a real-space quantum simulator based on the Non-equilibrium Green’s Function (NEGF) approach, self-consistently coupled to a 3D Poisson’s equation for electrostatics. GNR MOSFETs show promising device performance, in terms of low subthreshold swing and small drain-induced-barrier-lowing due to their excellent electrostatics and gate control (single monolayer). However, the quantum tunneling effects play an import role in the GNR device performance degradation for wider width GNR MOSFETs due to their reduced bandgap. At 2.2 nm width, the OFF current performance is completely dominated by tunneling currents, making the OFF-state of the device difficult to control.
KeywordsMOSFETs Graphene nanoribbon Transistors NEGF Quantum tunneling
Unable to display preview. Download preview PDF.
- 1.Semiconductor Industry Association: International technology roadmap for semiconductors (2005). Available: http://public.itrs.net/
- 8.Liang, G.C., Neophytou, N., Lundstrom, M.S., Nikonov, D.E.: Theoretical study of graphene nanoribbon field-effect transistors. In: Proceedings NSTI Nanotech 2007, pp. 127–130, Santa Clara, 20–24 May 2007 Google Scholar
- 10.Ramo, S., Whinnery, J., Van Duzer, T.: Fields and Waves in Communication in Electronics, 3rd edn. Willey, New York (1993) Google Scholar
- 11.Saito, R., Dresselhaus, G., Dresselhaus, M.: Physical Properties of Carbon Nanotubes. Imperial College Press, London (1998) Google Scholar