Journal of Computational Electronics

, Volume 7, Issue 3, pp 168–171 | Cite as

Parameter modeling for higher-order transport models in UTB SOI MOSFETs

  • Martin VasicekEmail author
  • Johann Cervenka
  • Martin Wagner
  • Markus Karner
  • Tibor Grasser


We present a two-dimensional tabularized higher-order transport model based on extracted parameters from a Subband Monte Carlo (SMC) simulator. Important effects like quantum confinement and surface roughness scattering are automatically taken into account. Device parameters like the electron temperature or the output characteristic of a SOI MOSFET are compared with the results obtained from models using bulk Monte Carlo (MC) data, where no quantization effects and no surface roughness scattering are considered.


Subband Monte Carlo Schrödinger/Poisson solver Method of moments 


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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  • Martin Vasicek
    • 1
    Email author
  • Johann Cervenka
    • 1
  • Martin Wagner
    • 1
  • Markus Karner
    • 1
  • Tibor Grasser
    • 1
  1. 1.Institute for MicroelectronicsTU WienViennaAustria

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