Journal of Computational Electronics

, Volume 7, Issue 3, pp 367–370 | Cite as

Simulation of non-equilibrium electron transport in silicon quantum wires

  • Gerald Ossig
  • Ferdinand SchürrerEmail author


The Simulation of the non-equilibrium behavior of the charge transport in semiconductor devices is usually based on a coupling of the semiclassical Boltzmann transport equation with the Poisson equation. We follow this successful approach but extend it with the Schrödinger effective mass equation leading to a Schrödinger-Poisson-Boltzmann system for the description of the non-equilibrium electron transport in silicon quantum wires. The silicon quantum wire is joined with a substrate, so that the phonons are non-confined. We take into account zero- and first order intra- and intervalley scattering mechanisms.


Schrödinger-Poisson-Boltzmann system Silicon quantum wires Electron transport 


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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  1. 1.Institute of Theoretical and Computational PhysicsTU GrazGrazAustria

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