Boltzman transport simulation of single-walled carbon nanotubes
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This works treats electronic transport in SWNTs in the Boltzmann Transport equation (BTE) formalism. The BTE is solved self-consistently with the Poisson equation and iterated in time using an upwinding finite-difference scheme until a steady-state is reached. Phonon scattering is included in the relaxation time approximation. Current-voltage characteristics of small diameter metallic nanotubes are explored with lengths ranging from 50 nm up to one micron. Current-voltage results show saturation at high bias near the value of 25 μA. Resistance of the tubes is shown to scale linearity with their length in the low bias regime with a slope of 80 kΩ/μm.
KeywordsBTE SWNT Carbon nanotube Transport simulation Upwind discretization
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- 5.Hess, K.: Advanced Theory of Semiconductor Devices. IEEE Press, New York (2000) Google Scholar