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Journal of Computational Electronics

, Volume 7, Issue 3, pp 288–292 | Cite as

NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs

NEGF simulations of the strain effect
  • Karol Kalna
  • Antonio Martinez
  • A. Svizhenko
  • M. P. Anantram
  • J. R. Barker
  • A. Asenov
Article

Abstract

The effect of biaxial strain on double gate (DG) nanoscaled Si MOSFET with channel lengths in the nanometre range is investigated using Non-Equilibrium Green’s Functions (NEGF) simulations. We have employed fully 2D NEGF simulations in order to answer the question at which body thickness the effects of strain is masked by the confinement impact. Following ITRS, we start with a 14 nm gate length DG MOSFET having a body thickness of 9 nm scaling the transistors to gate lengths of 10, 6 and 4 nm and body thicknesses of 6.1, 2.6 and 1.3 nm. The simulated I DV G characteristics show a 6% improvement in the on-current for the 14 nm gate length transistor mainly due to the energy separation of the Δ valleys. The strain effect separates the 2 fold from the 4 fold valleys thus keeping mostly operational transverse electron effective mass in the transport direction. However, in the device with an extreme body thickness of 1.3 nm, the strain effect has no more impact on the DG performance because the strong confinement itself produces a large energy separation of valleys.

Keywords

Strained silicon Double gate MOSFETs Thin-body architecture Non-equilibrium Green’s functions 

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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  • Karol Kalna
    • 1
  • Antonio Martinez
    • 1
  • A. Svizhenko
    • 2
  • M. P. Anantram
    • 3
  • J. R. Barker
    • 1
  • A. Asenov
    • 1
  1. 1.Device Modelling GroupUniversity of GlasgowGlasgowScotland, UK
  2. 2.Silvaco International Inc.Santa ClaraUSA
  3. 3.Department of Electrical and Computer EngineeringUniversity of WaterlooWaterlooCanada

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