Journal of Computational Electronics

, Volume 7, Issue 3, pp 138–141 | Cite as

Temperature dependence on the contact size of GeSbTe films for phase change memories

  • Yiming Li
  • Shao-Ming Yu
  • Chih-Hong Hwang
  • Yi-Ting Kuo


In this study, a three-dimensional electro-thermal time-domain simulation is developed for dynamic thermal analysis of Phase change memories (PCMs). The geometry effects of the GeSbTe (GST) materials and the TiN heater are explored through a series of numerical examinations. It is found that the contact size of the GST significantly alters the maximum temperature of the PCMs, compared with the height of the GST films. The heater’s aspect ratio also dominates the maximum temperature of the GST material, and the effect of the heater’s thickness on the temperature is more evident than its height. One conformal bi-layer GST structure with different electric and thermal conductivities on the GST layers is examined for different applied currents to extract the curve of resistances versus applied currents.


Phase change memories GeSbTe material Geometry effects Temperature Numerical simulation 


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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  • Yiming Li
    • 1
  • Shao-Ming Yu
    • 2
  • Chih-Hong Hwang
    • 1
  • Yi-Ting Kuo
    • 1
  1. 1.Department of Communication EngineeringNational Chiao Tung UniversityHsinchuTaiwan
  2. 2.Department of Computer ScienceNational Chiao Tung UniversityHsinchuTaiwan

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