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Journal of Computational Electronics

, Volume 7, Issue 3, pp 164–167 | Cite as

Electron subband dispersions in ultra-thin silicon films from a two-band kp theory

  • Viktor SverdlovEmail author
  • Hans Kosina
  • Siegfried Selberherr
Article

Abstract

The electron subband structure in a thin (100) silicon film is analyzed based on a two-band kp theory. For unprimed subbands the dependence of the nonparabolicity parameter on film thickness is obtained. The two-band kp theory gives a thickness dependence of the effective masses for primed subbands. Limitations of the model are discussed. The importance of the nonparabolicity parameter dependence on the film thickness for transport is demonstrated.

Keywords

kp method Device simulation Subband structure Quantum transport Monte Carlo method 

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References

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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  • Viktor Sverdlov
    • 1
    Email author
  • Hans Kosina
    • 1
  • Siegfried Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria

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