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Journal of Computational Electronics

, Volume 7, Issue 3, pp 146–150 | Cite as

Simulation of ZnO diodes for application in non-volatile crossbar memories

  • Michele Pra
  • György CsabaEmail author
  • Christoph Erlen
  • Paolo Lugli
Article

Abstract

As passive crossbar memories contain no amplifying/signal restoring components, their scalability, reliability and speed depends exclusively on the quality of diodes, fuse/antifuse elements and interconnections that constitute them. This paper presents a computational study of ZnO-based Schottky diodes which are thought to be a good candidate for the junction of a crossbar memory, mainly due to their limited thermal budget which guarantees the compatibility with Silicon technology. The simulation shows that the diode characteristics are indeed suitable for their use as junctions. A circuit level simulation demonstrates that optimized ZnO devices would allow the realization of many-megabit memory arrays.

Keywords

Non-volatile memories Passive memories ZnO rectifying junctions 

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Copyright information

© Springer Science+Business Media LLC 2008

Authors and Affiliations

  • Michele Pra
    • 1
  • György Csaba
    • 1
    Email author
  • Christoph Erlen
    • 1
  • Paolo Lugli
    • 1
  1. 1.Institute for NanoelectronicsTechnical University of MunichMunichGermany

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