Journal of Computational Electronics

, Volume 5, Issue 2–3, pp 255–258 | Cite as

Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs

  • Yiming Li
  • Wei-Hsin Chen


In this paper, electrical characteristics of metal-oxide-semiconductor field effect transistor (MOSFET) with silicon/gallium-arsenic (Si/GaAs) stacked film are numerically studied. By calculating several important device characteristics, such as the on-state current, the subthreshold swing, the drain induced barrier lowering, the threshold voltage, the threshold voltage roll-off, and the output resistance, a 50 nm Si/GaAs MOSFET is simulated with respect to different thicknesses of Si/GaAs film. Compared with the results of pure Si MOSFET, Si/GaAs MOSFET shows promising characteristics after properly selecting the thickness of Si/GaAs film. Among Si, germanium (Ge), and Si/Ge MOSFETs, Si/GaAs MOSFET relatively exhibits a higher driving capability due to higher carrier mobility within the Si/GaAs film. However, quantitatively accurate estimation of device characteristics will depend upon more precise calculation of band structure of the stacked film.


Electrical characteristics Silicon Gallium-arsenic MOSFET Numerical simulation 


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Copyright information

© Springer Science + Business Media, LLC 2006

Authors and Affiliations

  1. 1.Department of Communication EngineeringNational Chiao Tung UniversityHsinchuTaiwan
  2. 2.Department of ElectrophysicsNational Chiao Tung UniversityHsinchuTaiwan

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