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Journal of Computational Electronics

, Volume 6, Issue 1–3, pp 387–390 | Cite as

Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection

  • Clemens Heitzinger
  • Gerhard Klimeck
Article

Abstract

In recent years dna-sensors, and generally biosensors, with semiconducting transducers were fabricated and characterized. Although the concept of so-called Biofets was proposed already two decades ago, its realization has become feasible only recently due to advances in process technology. In this paper a comprehensive and rigorous approach to the simulation of silicon-nanowire dnafets at the feature-scale is presented. It allows to investigate the feasibility of single-molecule detectors and is used to elucidate the performance that can be expected from sensors with nanowire diameters in the deca-nanometer range. Finally the computational challenges for the simulation of silicon-nanowire dna-sensors are discussed.

Keywords

dnafet biofet Simulation Silicon-nanowire 

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Copyright information

© 2006 2006

Authors and Affiliations

  1. 1.School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteUSA

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