Journal of Computational Electronics

, Volume 6, Issue 1–3, pp 279–283 | Cite as

Perimeter recombination in thin film solar cells

  • Abderrahmane BelghachiEmail author


Surface recombination has a profound effect on the performance of a solar cell, at the illuminated surface reduces its photocurrent and along the cell's perimeter increases its dark current. The perimeter recombination current has two components; the first is due to recombination at the surface that intersects the space-charge layer while the second originates from recombination at the surface of quasi-neutral regions. The current due to recombination at the depleted layer surface is treated in a similar way to that of the bulk, using a simple model. We present an analytical form that produces results that agree well with reported experimental findings. The recombination current outside the space-charge region is of two-dimensional nature, it represents lateral diffusion of minority carriers from the boundary of the depleted layer to the perimeter. This current is calculated by solving numerically a two-dimensional continuity equation. As the ratio of perimeter to area is increased the perimeter current acquires important proportions, consequently the expected bulk recombination current becomes insignificant.


Solar cell MEMS Surface recombination 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Ohsawa, J., Kawasaki, M., Tanaka, T., et al.: A GaAs micro solar cell with output voltage over 20 V. Jpn., J. Appl. Phys. 38, 6947 (1999)CrossRefGoogle Scholar
  2. 2.
    Aberle, A.G., Altermatt, P.P., Heiser, G., et al.: Limiting loss mechanisms in 23% efficient silicon solar cells. J. Appl. Phys. 77(7), 3491 (1995)CrossRefGoogle Scholar
  3. 3.
    Mazhari, B., Morkoç, H.: Surface recombination in GaAs PN junction diode. J. Appl. Phys. 73(11), 7509 (1993)CrossRefGoogle Scholar
  4. 4.
    Belghachi, A.: Modelling of perimeter recombination in GaAs solar cells. Microelectron. J. 36, 115 (2005)CrossRefGoogle Scholar
  5. 5.
    Tobin, S.P., Vernon, S.M., Bajgar, C., et al.: Assessment of MOCVD and MBE- grown GaAs for high-efficiency solar cell applications. IEEE Transactions on Electron Devices 37(2), 469 (1990)CrossRefGoogle Scholar

Copyright information

© 2006 2006

Authors and Affiliations

  1. 1.Laboratory of Semiconductor Devices PhysicsUniversity of BécharBecharAlgeria

Personalised recommendations