Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs
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In this paper, electrical characteristics of 25 nm strained fin-typed field effect transistors (FinFETs) with oxide-nitride-stacked-capping layer are numerically studied. The FinFETs are fabricated on two different wafers, one is bulk silicon and the other is silicon-on-insulator (SOI) substrate. A three-dimensional device simulation is performed by solving a set of density-gradient-hydrodynamic equations to study device performance including, such as the drain current characteristics (the ID-VG and ID-VD curves), the drain-induced barrier height lowering, and the subthreshold swing. Comparison between the strained bulk and SOI FinFETs shows that the strained bulk FinFET is promising for emerging multiple-gate nanodevice era according to the manufacturability point of view.
KeywordsStrained bulk FinFET Strained SOI FinFET Device simulation Electrical characteristics Drain current Drain-induced barrier height lowering Subthreshold swing
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