Journal of Computational Electronics

, Volume 5, Issue 4, pp 305–309

Power·delay product in COSMOS logic circuits

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Abstract

In this simulation work, we use COSMOS logic devices—a novel single gate CMOS architecture recently announced [1]—in multi-input logic gates, assessing its performance in terms of power·delay product. We consider three different multi-input logic circuits: a two-input NOR gate, a three-input NOR gate, and a three-input composite NOR/NAND (NORAND) gate. For this power·delay analysis, the transient TCAD simulations are employed in a mixed-mode approach where circuit and device simulations are coupled together, culminating in the delay response of the circuits as well as the static/dynamic current components. The analysis shows that all circuits, except the 3-input NOR gate, has acceptable characteristics at low-power applications and static leakage limits all COSMOS circuits at high-bias conditions.

Keywords

CMOS COSMOS SiGe MOSFET TCAD SOI Power delay product 

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Copyright information

© 2006 2006

Authors and Affiliations

  1. 1.School of Electrical Engineering & Computer Science Russ College of Engineering and TechnologyOhio UniversityAthensUSA

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