Journal of Computational Electronics

, Volume 5, Issue 4, pp 345–348 | Cite as

Transient TCAD simulation of three-stage organic ring oscillator

  • C. Erlen
  • P. Lugli
  • M. Fiebig
  • S. Schiefer
  • B. Nickel
Article

Abstract

It is demonstrated that drift-diffusion simulation is a powerful tool in design, optimization and verification of organic circuits. Starting from the simulation of single transistor structures, we treat inverter circuits with active load under both static and transient conditions while analyzing the effects of different transistor geometries. Never shown before, a dynamic finite element simulation of a full three-stage organic ring oscillator operating at 105 kHz is presented.

Keywords

Organic electronics OTFT Simulation Inverter Oscillator 

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Copyright information

© 2006 2006

Authors and Affiliations

  • C. Erlen
    • 1
  • P. Lugli
    • 1
  • M. Fiebig
    • 2
  • S. Schiefer
    • 2
  • B. Nickel
    • 2
  1. 1.Institute for Nanoelectronics, TU MünchenMünchenGermany
  2. 2.Department für Physik, LMU MünchenMünchenGermany

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