Journal of Computational Electronics

, Volume 4, Issue 1–2, pp 31–34 | Cite as

Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs

  • H. TakedaEmail author
  • N. Mori


Three-dimensional simulation based on a non-equilibrium Green’s function method including electron-phonon interaction and Si/SiO2 interface roughness has been performed for ultra-small FinFETs. Comparing the simulated drain-current–gate-voltage characteristics with those obtained in the ballistic limit, effects of the scatterings on the device characteristics are discussed. Threshold voltage fluctuation is also discussed.


FinFET non-equilibrium Green’s function method quantum transport phonon scattering interface roughness 


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Copyright information

© Springer Science + Business Media, Inc. 2005

Authors and Affiliations

  1. 1.Department of Electronic EngineeringOsaka UniversitySuita CityJapan

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