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Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 393–396 | Cite as

Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green’s Function Formalism

  • Marc BescondEmail author
  • Jean-Luc Autran
  • Nicolas Cavassilas
  • Daniela Munteanu
  • Michel Lannoo
Article

Abstract

A program to numerically simulate point defects in nanowire metal-oxide-semiconductor field-effect transistors is described. The simulation scheme is based on the non-equilibrium Green’s function method self-consistently being obtained via the resolution of 3D Poisson’s equation. A tight-binding hamiltonian is used and the point defect is characterized by a macroscopic coulombic tail treated in the mode-space approach, plus a short range on-site perturbation potential energy, treated exactly. The effect on internal quantities and on the transistor characteristics is studied as a function of the strength and the location of the defect potential. Subthreshold current is found to vary in a factor 10 according to the position of the impurity.

Keywords

nanowire MOSFETs Ballistic transport point defect Green’s function Coulomb potential 

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Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  • Marc Bescond
    • 1
    Email author
  • Jean-Luc Autran
    • 1
  • Nicolas Cavassilas
    • 1
  • Daniela Munteanu
    • 1
  • Michel Lannoo
    • 1
  1. 1.Laboratory of Materials and Microelectronics of Provence (L2MP)MarseilleFrance

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