Journal of Computational Electronics

, Volume 3, Issue 3, pp 379–385

Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples

Article

DOI: 10.1007/s10825-004-7081-6

Cite this article as:
Laux, S.E. J Comput Electron (2004) 3: 379. doi:10.1007/s10825-004-7081-6

Abstract

The two-dimensional device simulation program QDAME has been extended to permit arbitrary crystallographic orientation. A ballistic formulation of quantum transport utilizing parabolic, ellipsoidal conduction bands is adopted and solved self-consistently with the Poisson equation. Results for Ge DGFETs with 7.5 nm channel length are used to demonstrate the approach.

Keywords

quantum transport ballistic DGFET Ge crystallographic orientation 

Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  1. 1.IBM Research Division T.J. Watson Research CenterSemiconductor Research and Development Center (SRDC)Yorktown HeightsUSA

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