Arbitrary Crystallographic Orientation in QDAME with Ge 7.5 nm DGFET Examples
The two-dimensional device simulation program QDAME has been extended to permit arbitrary crystallographic orientation. A ballistic formulation of quantum transport utilizing parabolic, ellipsoidal conduction bands is adopted and solved self-consistently with the Poisson equation. Results for Ge DGFETs with 7.5 nm channel length are used to demonstrate the approach.
Keywordsquantum transport ballistic DGFET Ge crystallographic orientation
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