3D Electrostatics of Carbon Nanotube Field-Effect Transistors
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The three dimensional (3D) electrostatics of carbon nanotube field-effect transistors (CNTFETs) is studied by solving the Poisson equation self consistently with equilibrium carrier statistics of CNTFETs. The 3D Poisson equation is solved using the method of moments. We examine how the 3D environment affects the electrostatics of a 30 nm intrinsic CNT under equilibrium conditions. We show that for a CNTFET with a planar gate, the scaling length (the distance by which the source and drain fields penetrate into the channel) is mostly determined by the gate oxide thickness. The contact geometry can also play an important role on the scaling length. A smaller contact results in shorter scaling length and better gate control. We finally show that the top gated geometry offers obvious advantage over the bottom gated geometry in terms of gate electrostatic control.
Keywordscarbon nanotubes method of moments Schottky barrier high-k dielectric flat band
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- 7.D.J. Frank, Taur Yuan, and P. Wong Hon-Sum, “Generalized scale length for two-dimensional effects in MOSFETs,” IEEE EDL, 19, 385 (1998).Google Scholar
- 8.S. Ramo, J.R. Whinnery, and T.V. Duzer, Field and Waves in Communication Electronics (Wiley New York, 1994).Google Scholar
- 9.J.D. Jackson, Classical Electrodynamics (Wiley New York, 1975).Google Scholar