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Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 277–280 | Cite as

3D Electrostatics of Carbon Nanotube Field-Effect Transistors

  • Neophytos Neophytou
  • Mark Lundstrom
  • Jing Guo
Article

Abstract

The three dimensional (3D) electrostatics of carbon nanotube field-effect transistors (CNTFETs) is studied by solving the Poisson equation self consistently with equilibrium carrier statistics of CNTFETs. The 3D Poisson equation is solved using the method of moments. We examine how the 3D environment affects the electrostatics of a 30 nm intrinsic CNT under equilibrium conditions. We show that for a CNTFET with a planar gate, the scaling length (the distance by which the source and drain fields penetrate into the channel) is mostly determined by the gate oxide thickness. The contact geometry can also play an important role on the scaling length. A smaller contact results in shorter scaling length and better gate control. We finally show that the top gated geometry offers obvious advantage over the bottom gated geometry in terms of gate electrostatic control.

Keywords

carbon nanotubes method of moments Schottky barrier high-k dielectric flat band 

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Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  1. 1.Electrical and Computer EnginneringPurdue UniversityWest Lafayette
  2. 2.Electrical and Computer EnginneringUniversity of FloridaGainsville

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