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Journal of Computational Electronics

, Volume 3, Issue 3–4, pp 273–276 | Cite as

Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon

  • Kazunori MatsudaEmail author
Article

Abstract

Strain-dependent effective masses and DOS masses for heavy- and light-holes are obtained by both analytical and numerical approaches. It is shown that the model using the strain-dependent hole masses in weakly stressed region, which correspond to the high temperature approximation of the Bir and Pikus’s theory, gives fairly good explanation for the piezoresistance and piezocapasitance effects.

Keywords

strain hole mass density-of-state piezoresistance piezocapasitance 

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References

  1. 1.
    C.S. Smith, “Piezoresistance effect in germanium and silicon,” Phys. Rev., 94, 42 (1954).CrossRefGoogle Scholar
  2. 2.
    M.V. Fischetti and S.E. Laux, “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe allys,” J. Appl. Phys., 80, 2234 (1996).CrossRefGoogle Scholar
  3. 3.
    H. Hasegawa, “Theory of cyclotron resonance in strained silicon crystals,” Phys. Rev., 129, 1029 (1963).CrossRefGoogle Scholar
  4. 4.
    T. Toriyama and S. Sugiyama, “Analysis of piezoresistance in p-type silicon for mechanical sensors,” J. Microerectromech. Syst., 11, 598 (2002).CrossRefGoogle Scholar
  5. 5.
    Y. Kanda, “Effect of compressive stress on silicon bipolar devices,” J. Appl. Phys., 44, 389 (1973).CrossRefGoogle Scholar
  6. 6.
    J.F. Creemer and P.J. French, “A new model of the effect of mechanical stress on the saturation current of bipolar transistor,” Sens. Actuators A, 97/98, 289 (2002).CrossRefGoogle Scholar
  7. 7.
    A.P. Friedrich, P.A. Besse, C.M.A. Ashruf, and R.S. Porovic, “Characterization of a novel piezo-tunneling strain sensor,” Sens. Actuators A, 66, 125 (1998).CrossRefGoogle Scholar
  8. 8.
    K. Matsuda and Y. Kanda, “Stress-induced effects on depletion-layer capacitance of metal-oxide-semiconductor capacitors,” Appl. Phys. Lett., 63, 4351 (2003).CrossRefGoogle Scholar
  9. 9.
    G.L. Bir and G.E. Pikus, Symmetry and Strain-Induced Effect in Semiconductor (Wiley, New York, 1974).Google Scholar
  10. 10.
    I. Balslev, “Influence of uniaxial stress on the indirect absorption edge in silicon and germanium,” Phys. Rev., 143, 636 (1966).CrossRefGoogle Scholar
  11. 11.
    C.K. Kim, M. Cardona, and S. Rodoriguez, “Effect of free carriers on the elastic constants of p-type silicon and Germanium,” Phys. Rev. B, 13, 5429 (1976).CrossRefGoogle Scholar
  12. 12.
    Y. Kanda, “A graphical representation of the piezoresistance coefficients in silicon,” IEEE Trans., ED-29, 64 (1982).Google Scholar
  13. 13.
    P. Kleiman, B. Semmache, M. Le Berre, and D. Barbier, “Stress-dependent hole effective masses and piezoresistive properties of p-type monocrystalline and polycrystalline silicon,” Phys. Rev. B, 57, 8966 (1998).CrossRefGoogle Scholar

Copyright information

© Springer Science + Business Media, Inc. 2004

Authors and Affiliations

  1. 1.Naruto University of EducationNaruto

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