Strain-Dependent Hole Masses and Piezoresistive Properties of Silicon
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Strain-dependent effective masses and DOS masses for heavy- and light-holes are obtained by both analytical and numerical approaches. It is shown that the model using the strain-dependent hole masses in weakly stressed region, which correspond to the high temperature approximation of the Bir and Pikus’s theory, gives fairly good explanation for the piezoresistance and piezocapasitance effects.
Keywordsstrain hole mass density-of-state piezoresistance piezocapasitance
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